 |
Electronic Components Datasheet Search |
|
|
Electronic Components Datasheet Search |
|
NCE70R360D Datasheet(PDF) 2 Page - Wuxi NCE Power Semiconductor Co., Ltd |
|
||||||||||||||||||||||||||||||
NCE70R360D Datasheet(HTML) 2 Page - Wuxi NCE Power Semiconductor Co., Ltd |
|
|
2 / 10 page  Wuxi NCE Power Semiconductor Co., Ltd Page http://www.ncepower.com v1.0 2 NCE70R360D,NCE70R360,NCE70R360F Parameter Symbol NCE70R360D NCE70R360 NCE70R360F Unit Drain Source voltage slope, VDS ≤480 V, dv/dt 50 V/ns Reverse diode dv/dt，VDS ≤480 V,ISD<ID dv/dt 15 V/ns Operating Junction and Storage Temperature Range TJ,TSTG -55...+150 °C * limited by maximum junction temperature Table 2. Thermal Characteristic Parameter Symbol NCE70R360D NCE70R360 NCE70R360F Unit Thermal Resistance，Junction-to-Case（Maximum） RthJC 1.03 3.82 °C /W Thermal Resistance，Junction-to-Ambient （Maximum） RthJA 62 80 °C /W Table 3. Electrical Characteristics (TA=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit On/off states Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA 700 V Zero Gate Voltage Drain Current(Tc=25℃) IDSS VDS=700V,VGS=0V 0.05 1 μA Zero Gate Voltage Drain Current(Tc=125℃) IDSS VDS=700V,VGS=0V 100 μA Gate-Body Leakage Current IGSS VGS=±30V,VDS=0V ±100 nA Gate Threshold Voltage VGS(th) VDS=VGS,ID=250μA 2.5 3 3.5 V Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=7A 360 400 mΩ Dynamic Characteristics Forward Transconductance gFS VDS = 20V, ID = 7A 8 S Input Capacitance Clss 1030 pF Output Capacitance Coss 85 pF Reverse Transfer Capacitance Crss VDS=50V,VGS=0V, F=1.0MHz 4.5 pF Total Gate Charge Qg 23 40 nC Gate-Source Charge Qgs 5.7 nC Gate-Drain Charge Qgd VDS=480V,ID=11A, VGS=10V 8 nC Intrinsic gate resistance RG f = 1 MHz open drain 2 Ω Switching times Turn-on Delay Time td(on) 9 nS Turn-on Rise Time tr 4 nS Turn-Off Delay Time td(off) 40 65 nS Turn-Off Fall Time tf VDD=380V,ID=5.5A, RG=6.8Ω,VGS=10V 4.5 8 nS Source- Drain Diode Characteristics Source-drain current(Body Diode) ISD 11 A Pulsed Source-drain current(Body Diode) ISDM TC=25°C 33 A Forward on voltage VSD Tj=25°C,ISD=11A,VGS=0V 0.9 1.2 V Reverse Recovery Time trr 245 nS Reverse Recovery Charge Qrr 2.4 uC Peak Reverse Recovery Current Irrm Tj=25°C,IF=11A,di/dt=100A/μs 20 A Notes: 1.Repetitive Rating: Pulse width limited by maximum junction temperature 2. Tj=25℃,VDD=50V,VG=10V, RG=25Ω |
Similar Part No. - NCE70R360D |
|
Similar Description - NCE70R360D |
|
|
|
Link URL |
| Privacy Policy |
| ALLDATASHEET.NET |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
English ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
