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RJH60M1DPP-M0 Datasheet(PDF) 4 Page - Renesas Technology Corp

Part # RJH60M1DPP-M0
Description  600V - 8A - IGBT Application: Inverter
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

RJH60M1DPP-M0 Datasheet(HTML) 4 Page - Renesas Technology Corp

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RJH60M1DPP-M0
Preliminary
R07DS0528EJ0300 Rev.3.00
Page 4 of 9
May 25, 2012
10
8
6
4
2
0
20
16
12
8
4
0
Typical Transfer Characteristics
0
48
12
16
20
VCE = 10 V
Pulse Test
Gate to Emitter Voltage VGE (V)
25°C
Ta = 150
°C
Collector to Emitter Saturation Voltage
vs. Junction Temparature (Typical)
−25
02575
125
50
100
150
Junction Temparature Tj (°C)
8 A
3 A
IC = 16 A
0
1
4
2
5
3
VGE = 15 V
Pulse Test
1
3
2
4
5
Collector to Emitter Saturation Voltage
vs. Gate to Emitter Voltage (Typical)
Gate to Emitter Voltage VGE (V)
8
10
12
18
16
14
20
IC = 16 A
8 A
Tc = 25°C
Pulse Test
1
3
2
4
5
8
10
12
18
16
14
20
Collector to Emitter Saturation Voltage
vs. Gate to Emitter Voltage (Typical)
Gate to Emitter Voltage VGE (V)
Tc = 150°C
Pulse Test
Gate to Emitter Cutoff Voltage
vs. Junction Temparature (Typical)
−25
02575
125
50
100
150
VCE = 10 V
Pulse Test
Junction Temparature Tj (°C)
1 mA
IC = 10 mA
IC = 16 A
8 A
5
4
3
2
1
0
Frequency Characteristics (Typical)
Frequency f (kHz)
1
100
10
1000
Tj = 125°C, Tc = 90°C, VCE = 400 V
VGE = 15 V, Rg = 5 Ω, duty = 50%
0
Collector current wave
(Square wave)


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