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OP296 Datasheet(PDF) 2 Page - Analog Devices |
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OP296 Datasheet(HTML) 2 Page - Analog Devices |
2 / 19 page OP196/OP296/OP496–SPECIFICATIONS ELECTRICAL SPECIFICATIONS Parameter Symbol Conditions Min Typ Max Unit INPUT CHARACTERISTICS Offset Voltage VOS OP196G, OP296G, OP496G 35 300 µV –40 °C ≤ TA ≤ +125°C 650 µV OP296H, OP496H 800 µV –40 °C ≤ TA ≤ +125°C 1.2 mV Input Bias Current IB –40 °C ≤ TA ≤ +125°C ±10 ±50 nA Input Offset Current IOS ±1.5 ±8nA –40 °C ≤ TA ≤ +125°C ±20 nA Input Voltage Range VCM 05.0 V Common-Mode Rejection Ratio CMRR 0 V ≤ VCM ≤ 5.0 V, –40 °C ≤ T A ≤ +125°C65 dB Large Signal Voltage Gain AVO RL = 100 k Ω, 0.30 V ≤ VOUT ≤ 4.7 V, –40 °C ≤ T A ≤ +125°C 150 200 V/mV Long-Term Offset Voltage VOS G Grade, Note 1 550 µV H Grade, Note 1 1 mV Offset Voltage Drift ∆V OS/ ∆T G Grade, Note 2 1.5 µV/°C H Grade, Note 2 2 µV/°C OUTPUT CHARACTERISTICS Output Voltage Swing High VOH IL = 100 µA 4.85 4.92 V IL = 1 mA 4.30 4.56 V IL = 2 mA 4.1 V Output Voltage Swing Low VOL IL = – 36 70 mV IL = –1 mA 350 550 mV IL = –2 mA 750 mV Output Current IOUT ±4mA POWER SUPPLY Power Supply Rejection Ratio PSRR ±2.5 V ≤ VS ≤ ±6 V, –40 °C ≤ T A ≤ +125°C85 dB Supply Current per Amplifier ISY VOUT = 2.5 V, RL = ∞ 60 µA –40 °C ≤ TA ≤ +125°C45 80 µA DYNAMIC PERFORMANCE Slew Rate SR RL = 100 k Ω 0.3 V/ µs Gain Bandwidth Product GBP 350 kHz Phase Margin øm 47 Degrees NOISE PERFORMANCE Voltage Noise en p-p 0.1 Hz to 10 Hz 0.8 µV p-p Voltage Noise Density en f = 1 kHz 26 nV/ √Hz Current Noise Density in f = 1 kHz 0.19 pA/ √Hz NOTES 1Long-term offset voltage is guaranteed by a 1,000 hour life test performed on three independent lots at 12 5 °C, with an LTPD of 1.3. 2Offset voltage drift is the average of the –40 °C to +25°C delta and the +25°C to +125°C delta. Specifications subject to change without notice. –2– (@ VS = 5.0 V, VCM = 2.5 V, TA = 25 C, unless otherwise noted.) REV. + E 100 μA |
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