LL101C datasheet(2/2 Pages) SUNMATE

Part #	LL101C

Description	30mA Surface Mount Schottky Barrier Diode

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Manufacturer	SUNMATE [SUNMATE electronic Co., LTD]

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Parameter

Test condition

Part

Symbol

Min

Typ.

Max

Unit

Reverse Breakdown Voltage

IR = 10 µA

LL101A

V(BR)R

60

V

LL101B

V(BR)R

50

V

LL101C

V(BR)R

40

V

Leakage current

VR = 50 V

LL101A

IR

200

nA

VR = 50V

LL101B

IR

200

nA

VR = 50 V

LL101C

IR

200

nA

Forward voltage drop

IF = 1 mA

LL101A

VF

410

mV

IF = 1mA

LL101B

VF

400

mV

IF = 1 mA

LL101C

VF

390

mV

IF = 15 mA

LL101A

VF

1000

mV

LL101B

VF

950

mV

LL101C

VF

900

mV

Diode capacitance

VR = 0 V, f = 1 MHz

LL101A

CD

2.0

pF

VR = 0 V, f = 1 MHz

LL101B

CD

2.1

pF

LL101C

CD

2.2

pF

Reverse recovery time

IF = IR = 5 mA,

recover to 0.1 IR

trr

1ns

Figure 1. Typ. IF vs. VF for primary conduction through the

Schottky barrier

gll101a_01

Figure 2. Typ. IF of combination Schottky barrrier and PN junction

guard ring

gll101a_02

Figure 3. Typical Variation of Reverse Current at Various

Temperatures

gll101a_03

Figure 4. Typical Capacitance Curve as a Function of Reverse

Voltage

gll101a_04

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LL101C Datasheet(PDF) 2 Page - SUNMATE electronic Co., LTD

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