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RJH60V2BDPP-M0 Datasheet(PDF) 2 Page - Renesas Technology Corp |
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RJH60V2BDPP-M0 Datasheet(HTML) 2 Page - Renesas Technology Corp |
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2 / 10 page  RJH60V2BDPP-M0 Preliminary R07DS0760EJ0100 Rev.1.00 Page 2 of 9 May 25, 2012 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions Collector to emitter breakdown voltage V(BR)CES 600 — — V IC =10 A, VGE = 0 Zero gate voltage collector current / Diode reverse current ICES / IR — — 5 A VCE = 600 V, VGE = 0 Gate to emitter leak current IGES — — ±1 A VGE = ±30 V, VCE = 0 Gate to emitter cutoff voltage VGE(off) 5.5 — 7.5 V VCE = 10 V, IC = 1 mA VCE(sat) — 1.6 2.2 V IC = 12 A, VGE = 15 V Note3 Collector to emitter saturation voltage VCE(sat) — 2.2 — V IC = 25 A, VGE = 15 V Note3 Input capacitance Cies — 450 — pF Output capacitance Coes — 37 — pF Reverse transfer capacitance Cres — 18 — pF VCE = 25 V VGE = 0 f = 1 MHz Total gate charge Qg — 32 — nC Gate to emitter charge Qge — 5 — nC Gate to collector charge Qgc — 17 — nC VGE = 15 V VCE = 300 V IC = 12 A Turn-on delay time td(on) — 33 — ns Rise time tr — 15 — ns Turn-off delay time td(off) — 65 — ns Fall time tf — 75 — ns Turn-on energy Eon — 0.03 — mJ Turn-off energy Eoff — 0.18 — mJ Total switching energy Etotal — 0.21 — mJ VCC = 300 V VGE = 15 V IC = 12 A Rg = 5 Inductive load Short circuit withstand time tsc 3 6 — s Tc = 100 C VCC 360 V, VGE = 15 V FRD forward voltage VF — 2.5 — V IF = 12 A Note3 FRD reverse recovery time trr — 25 — ns FRD reverse recovery charge Qrr — 0.02 — C FRD peak reverse recovery current Irr — 1.2 — A IF = 12 A diF/dt = 100 A/s Notes: 3. Pulse test. |
Similar Part No. - RJH60V2BDPP-M0_15 |
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Similar Description - RJH60V2BDPP-M0_15 |
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