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MMBTA06 Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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MMBTA06 Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
1 / 3 page Elektronische Bauelemente MMBTA06 0.5A , 80V NPN Plastic Encapsulated Transistor 03-May-2012 Rev. C Page 1 of 3 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. Base Emitter Collector RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES High Voltage Application Telephone Application Complementary to MMBTA56 MARKING 1GM PACKAGE INFORMATION ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Ratings Unit Collector to Base Voltage VCBO 80 V Collector to Emitter Voltage VCEO 80 V Emitter to Base Voltage VEBO 4 V Collector Current - Continuous IC 500 mA Collector Power Dissipation PC 300 mW Thermal Resistance From Junction To Ambient RθJA 416 °C / W Junction, Storage Temperature TJ, TSTG 150, -55~150 °C ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Collector to Base Breakdown Voltage V(BR)CBO 80 - - V IC=0.1mA, IE=0 Collector to Emitter Breakdown Voltage V(BR)CEO 80 - - V IC=1mA, IB=0 Emitter to Base Breakdown Voltage V(BR)EBO 4 - - V IE=0.1mA, IC=0 Collector cut-off current ICBO - - 0.1 μA VCB=80V, IE=0 Collector cut-off current ICES - - 0.1 μA VCE=60V, IB=0 Emitter cut-off current IEBO - - 0.1 μA VEB=3V, IC=0 hFE(1) 100 - 400 VCE=1V, IC=10mA DC Current Gain hFE(2) 100 - - VCE=1V, IC=100mA Collector to Emitter Saturation Voltage VCE(sat) - - 0.25 V IC=100mA, IB=10mA Base to Emitter Saturation Voltage VBE(sat) - - 1.2 V IC=100mA, IB=10mA Transition Frequency fT 100 - - MHz VCE=2V, IC=10mA, f=100MHz Package MPQ Leader Size SOT-23 3K 7 inch Millimeter Millimeter REF. Min. Max. REF. Min. Max. A 2.80 3.04 G 0.09 0.18 B 2.10 2.55 H 0.45 0.60 C 1.20 1.40 J 0.08 0.177 D 0.89 1.15 K 0.6 REF. E 1.78 2.04 L 0.89 1.02 F 0.30 0.50 SOT-23 Top View A L C B D G H J F K E 1 2 3 1 2 3 |
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Similar Description - MMBTA06_15 |
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