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IR51H214 Datasheet(PDF) 3 Page - International Rectifier |
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IR51H214 Datasheet(HTML) 3 Page - International Rectifier |
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3 / 6 page  IR51H214 Dynamic Electrical Characteristics VBIAS (VCC, VB) = 12V unless otherwise specified. Parameter TA = 25ºC Symbol Definition Min. Typ. Max. Units Test Conditions trr Reverse Recovery Time (MOSFET Body Diode) --- 190 --- ns IF = 850mA Qrr Reverse Recovery Charge (MOSFET Body Diode) --- 0.64 --- µC di/dt = 100A/µs DT Deadtime, LS Turn-Off to HS Turn-On & HS Turn-Off to LS Turn-On --- 1.2 --- µs DRT Duty Cycle --- 50 --- % fOSC = 20 kHz Static Electrical Characteristics VBIAS (VCC, VB) = 12V unless otherwise specified. Parameter TA = 25ºC Symbol Definition Min. Typ. Max. Units Test Conditions Supply Characteristics VCCUV+ VCC Supply Undervoltage Positive Going Threshold --- 8.4 --- V VCCUV- VCC Supply Undervoltage Negative Going Threshold --- 8.0 --- IQCC Quiescent VCC Supply Current --- 300 --- µA VCLAMP VCC Zener Shunt Clamp Voltage --- 15.6 --- V ICC = 5 mA Floating Supply Characteristics IQBS Quiescent VBS Supply Current --- 30 --- µA IOS Offset Supply Leakage Current--- --- 50 V B = VIN = 250V Oscillator I/O Characteristics fOSC Oscillator Frequency --- 20 --- kHz RT = 35.7 k Ω, CT = 1 nF --- 100 --- RT = 7.04 k Ω, CT = 1 nF ICT CT Input Current --- 0.001 1.0 µA VCTUV CT Undervoltage Lockout --- 100 --- 2.5V < V CC < VCCUV+ VRT+ RT High Level Output Voltage, VCC - RT ---20--- IRT = -100 µA --- 200 --- mV IRT = -1 mA VRT- RT Low Level Output Voltage ---20--- IRT = 100 µA --- 200 --- IRT = 1 mA VRTUV RT Undervoltage Lockout, VCC - RT --- 100 --- 2.5V < VCC < VCCUV+ VCT+ 2/3 VCC Threshold --- 8.0 --- V VCT- 1/3 VCC Threshold --- 4.0 --- Output Characteristics RDS(on) Static Drain-to-Source On-Resistance --- 2.0 --- Ω ID = 850mA VSD Diode Forward Voltage --- 0.8 --- V Tj = 150 ºC To Order Next Data Sheet Index Previous Datasheet |
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