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IRFB4019 Datasheet(PDF) 2 Page - Kersemi Electronic Co., Ltd. |
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IRFB4019 Datasheet(HTML) 2 Page - Kersemi Electronic Co., Ltd. |
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2 / 7 page  S D G Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units BVDSS Drain-to-Source Breakdown Voltage 150 ––– ––– V ∆ΒVDSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.19 ––– V/°C RDS(on) Static Drain-to-Source On-Resistance ––– 80 95 m Ω VGS(th) Gate Threshold Voltage 3.0 ––– 4.9 V ∆VGS(th)/∆TJ Gate Threshold Voltage Coefficient ––– -13 ––– mV/°C IDSS Drain-to-Source Leakage Current ––– ––– 20 µA ––– ––– 250 IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA Gate-to-Source Reverse Leakage ––– ––– -100 gfs Forward Transconductance 14 ––– ––– S Qg Total Gate Charge ––– 13 20 Qgs1 Pre-Vth Gate-to-Source Charge ––– 3.3 ––– Qgs2 Post-Vth Gate-to-Source Charge ––– 0.95 ––– nC Qgd Gate-to-Drain Charge ––– 4.1 ––– Qgodr Gate Charge Overdrive ––– 4.7 ––– See Fig. 6 and 19 Qsw Switch Charge (Qgs2 + Qgd) ––– 5.1 ––– RG(int) Internal Gate Resistance ––– 2.4 ––– Ω td(on) Turn-On Delay Time ––– 7.0 ––– tr Rise Time ––– 13 ––– td(off) Turn-Off Delay Time ––– 12 ––– ns tf Fall Time ––– 7.8 ––– Ciss Input Capacitance ––– 800 ––– Coss Output Capacitance ––– 74 ––– pF Crss Reverse Transfer Capacitance ––– 19 ––– Coss Effective Output Capacitance ––– 99 ––– LD Internal Drain Inductance ––– 4.5 ––– Between lead, nH 6mm (0.25in.) LS Internal Source Inductance ––– 7.5 ––– from package Avalanche Characteristics Parameter Units EAS Single Pulse Avalanche Energy d mJ IAR Avalanche Current Ãg A EAR Repetitive Avalanche Energy g mJ Diode Characteristics Parameter Min. Typ. Max. Units IS @ TC = 25°C Continuous Source Current ––– ––– 17 (Body Diode) A ISM Pulsed Source Current ––– ––– 51 (Body Diode) Ã VSD Diode Forward Voltage ––– ––– 1.3 V trr Reverse Recovery Time ––– 64 96 ns Qrr Reverse Recovery Charge ––– 160 240 nC ––– 73 See Fig. 14, 15, 17a, 17b ID = 10A Typ. Max. ƒ = 1.0MHz, See Fig.5 TJ = 25°C, IF = 10A di/dt = 100A/µs e TJ = 25°C, IS = 10A, VGS = 0V e showing the integral reverse p-n junction diode. Conditions VGS = 0V, ID = 250µA Reference to 25°C, ID = 1mA VGS = 10V, ID = 10A e VDS = VGS, ID = 50µA VDS = 150V, VGS = 0V VGS = 0V, VDS = 0V to 120V VDS = 150V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V VGS = 10V ID = 10A VGS = 0V MOSFET symbol RG = 2.4Ω VDS = 10V, ID = 10A Conditions and center of die contact VDD = 75V, VGS = 10VÃe VDS = 75V VDS = 50V IRFB4019PBF 2014-8-13 www.kersemi.com 2 |
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