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IRFR825 Datasheet(PDF) 2 Page - Kersemi Electronic Co., Ltd. |
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IRFR825 Datasheet(HTML) 2 Page - Kersemi Electronic Co., Ltd. |
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2 / 9 page  Repetitive rating; pulse width limited by max. junction temperature. (See Fig. 11) Starting TJ = 25°C, L = 40mH, RG = 25Ω,IAS = 3.0A. (See Figure 13). ISD = 6.0A, di/dt ≤ 416A/μs, VDDV(BR)DSS,TJ ≤ 150°C. Pulse width ≤ 300μs; duty cycle ≤ 2%. Notes:
Coss eff. is a fixed capacitance that gives the same charging timeas Coss while VDS is rising from 0 to 80% VDSS. Coss eff.(ER) is a fixed capacitance that stores the same energy as Coss while VDS is rising from 0 to 80% VDSS. Rθ is measured at TJ approximately 90°C When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniquea refer to applocation note # AN- 994 echniques refer to application note #AN-994. Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units V(BR)DSS Drain-to-Source Breakdown Voltage 500 ––– ––– V ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient ––– 0.33 ––– V/°C RDS(on) Static Drain-to-Source On-Resistance ––– 1.05 1.3 Ω VGS(th) Gate Threshold Voltage 3.0 ––– 5.0 V IDSS Drain-to-Source Leakage Current ––– ––– 25 μA ––– ––– 2.0 mA IGSS Gate-to-Source Forward Leakage ––– ––– 100 Gate-to-Source Reverse Leakage ––– ––– -100 Dynamic @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units gfs Forward Transconductance 7.5 ––– ––– S Qg Total Gate Charge ––– ––– 34 Qgs Gate-to-Source Charge ––– ––– 11 nC Qgd Gate-to-Drain ("Miller") Charge ––– ––– 14 td(on) Turn-On Delay Time ––– 8.5 ––– tr Rise Time ––– 25 ––– ns td(off) Turn-Off Delay Time ––– 30 ––– tf Fall Time ––– 20 ––– Ciss Input Capacitance ––– 1346 ––– Coss Output Capacitance ––– 76 ––– Crss Reverse Transfer Capacitance ––– 15 ––– Coss Output Capacitance ––– 1231 ––– pF Coss Output Capacitance ––– 25 ––– Coss eff. Effective Output Capacitance ––– 51 ––– Coss eff. (ER) Effective Output Capacitance (Energy Related) Avalanche Characteristics Parameter Typ. Units EAS Single Pulse Avalanche Energy d ––– mJ IAR Avalanche Current à ––– A EAR Repetitive Avalanche Energy ––– mJ Thermal Resistance Parameter Typ. Units RθJC Junction-to-Case h ––– RθJA Junction-to-Ambient (PCB Mount) i ––– °C/W RθJA Junction-to-Ambient ––– VDS = VGS, ID = 250μA VDS = 500V, VGS = 0V VDS = 400V, VGS = 0V, TJ = 125°C Conditions VGS = 0V, ID = 250μA Reference to 25°C, ID = 1mA VGS = 10V, ID = 3.7A f VGS = 20V Conditions VDS = 50V, ID = 3.7A VGS = -20V ID = 6.0A VDS = 400V VGS = 10V, See Fig.14a &14b f VDD = 250V ID = 6.0A RG =7.5 Ω VGS = 10V, See Fig. 15a & 15b f VGS = 0V VDS = 25V ƒ = 1.0KHz, See Fig. 5 3 11.9 Max. 178 VGS = 0V,VDS = 0V to 400V g VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz VGS = 0V, VDS = 400V, ƒ = 1.0MHz 110 Max. 1.05 50 ––– 43 ––– nA IRFR825TRPBF 2014-8-16 2 www.kersemi.com |
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