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IRF1302L Datasheet(PDF) 1 Page - International Rectifier |
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IRF1302L Datasheet(HTML) 1 Page - International Rectifier |
1 / 11 page Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 174 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 120 A IDM Pulsed Drain Current 700 PD @TC = 25°C Power Dissipation 200 W Linear Derating Factor 1.4 W/°C VGS Gate-to-Source Voltage ± 20 V EAS Single Pulse Avalanche Energy 350 mJ IAR Avalanche Current See Fig.12a, 12b, 15, 16 A EAR Repetitive Avalanche Energy mJ dv/dt Peak Diode Recovery dv/dt TBD V/ns TJ Operating Junction and -55 to + 175 TSTG Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case ) °C HEXFET® Power MOSFET Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFET utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. S D G Absolute Maximum Ratings VDSS = 20V RDS(on) = 4.0mΩ ID = 174A Description 07/16/02 www.irf.com 1 Benefits ● Advanced Process Technology ● Ultra Low On-Resistance ● Dynamic dv/dt Rating ● 175°C Operating Temperature ● Fast Switching ● Repetitive Avalanche Allowed up to Tjmax AUTOMOTIVE MOSFET Thermal Resistance Parameter Typ. Max. Units RθJC Junction-to-Case ––– 0.74 °C/W RθJA Junction-to-Ambient (PCB mount) ––– 40 D2Pak IRF1302S TO-262 IRF1302L PD - 94520 IRF1302S IRF1302L |
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