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IRLU8256PBF Datasheet(PDF) 7 Page - Kersemi Electronic Co., Ltd. |
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IRLU8256PBF Datasheet(HTML) 7 Page - Kersemi Electronic Co., Ltd. |
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7 / 11 page  Fig 15. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer P.W. Period di/dt Diode Recovery dv/dt Ripple ≤ 5% Body Diode Forward Drop Re-Applied Voltage Reverse Recovery Current Body Diode Forward Current VGS=10V VDD ISD Driver Gate Drive D.U.T. ISD Waveform D.U.T. VDS Waveform Inductor Curent D = P.W. Period * VGS = 5V for Logic Level Devices * + - + + + - - - RG VDD • dv/dt controlled by RG • Driver same type as D.U.T. • ISD controlled by Duty Factor "D" • D.U.T. - Device Under Test D.U.T Fig 16. Gate Charge Waveform Vds Vgs Id Vgs(th) Qgs1 Qgs2 Qgd Qgodr IRLR8256PBF IRLU8256PBF 2014-8-25 7 www.kersemi.com |
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