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IRLU024N Datasheet(PDF) 2 Page - Kersemi Electronic Co., Ltd.

Part # IRLU024N
Description  Logic-Level Gate Drive
Download  10 Pages
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Manufacturer  KERSEMI [Kersemi Electronic Co., Ltd.]
Direct Link  http://www.kersemi.com
Logo KERSEMI - Kersemi Electronic Co., Ltd.

IRLU024N Datasheet(HTML) 2 Page - Kersemi Electronic Co., Ltd.

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IRLR/U024N
S
D
G
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
MOSFET symbol
(Body Diode)
–––
–––
showing the
ISM
Pulsed Source Current
integral reverse
(Body Diode)

–––
–––
p-n junction diode.
VSD
Diode Forward Voltage
–––
–––
1.3
V
TJ = 25°C, IS = 11A, VGS = 0V
„
trr
Reverse Recovery Time
–––
60
90
ns
TJ = 25°C, IF = 11A
Qrr
Reverse RecoveryCharge
–––
130
200
nC
di/dt = 100A/µs
„
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Source-Drain Ratings and Characteristics
17
72
A
‚ V
DD = 25V, starting TJ = 25°C, L = 790µH
RG = 25Ω, IAS = 11A. (See Figure 12)
 Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11)
„ Pulse width ≤ 300µs; duty cycle ≤ 2%.
† Uses IRLZ24N data and test conditions.
… This is applied for I-PAK, LS of D-PAK is measured between
lead and center of die contact
ƒ I
SD ≤ 11A, di/dt ≤ 290A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
Notes:
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
55
–––
–––
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
–––
0.061 –––
V/°C
Reference to 25°C, ID = 1mA
–––
––– 0.065
VGS = 10V, ID = 10A
„
–––
––– 0.080
VGS = 5.0V, ID = 10A
„
–––
––– 0.110
VGS = 4.0V, ID = 9.0A
„
VGS(th)
Gate Threshold Voltage
1.0
–––
2.0
V
VDS = VGS, ID = 250µA
gfs
Forward Transconductance
8.3
–––
–––
S
VDS = 25V, ID = 11A
–––
–––
25
µA
VDS = 55V, VGS = 0V
–––
–––
250
VDS = 44V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage
–––
–––
100
nA
VGS = 16V
Gate-to-Source Reverse Leakage
–––
–––
-100
VGS = -16V
Qg
Total Gate Charge
–––
–––
15
ID = 11A
Qgs
Gate-to-Source Charge
–––
–––
3.7
nC
VDS = 44V
Qgd
Gate-to-Drain ("Miller") Charge
–––
–––
8.5
VGS = 5.0V, See Fig. 6 and 13
„†
td(on)
Turn-On Delay Time
–––
7.1
–––
VDD = 28V
tr
Rise Time
–––
74
–––
ns
ID = 11A
td(off)
Turn-Off Delay Time
–––
20
–––
RG = 12Ω, VGS = 5.0V
tf
Fall Time
–––
29
–––
RD = 2.4Ω, See Fig. 10
„†
Between lead,
6mm (0.25in.)
from package
and center of die contact
Ciss
Input Capacitance
–––
480
–––
VGS = 0V
Coss
Output Capacitance
–––
130
–––
pF
VDS = 25V
Crss
Reverse Transfer Capacitance
–––
61
–––
ƒ = 1.0MHz, See Fig. 5
†
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
nH
IGSS
S
D
G
LS
InternalSourceInductance
–––
7.5
–––
RDS(on)
StaticDrain-to-SourceOn-Resistance
LD
InternalDrainInductance
–––
4.5
–––
IDSS
Drain-to-SourceLeakageCurrent
www.kersemi.com
2014-8-24
2


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