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IRLU3915 Datasheet(PDF) 1 Page - Kersemi Electronic Co., Ltd. |
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IRLU3915 Datasheet(HTML) 1 Page - Kersemi Electronic Co., Ltd. |
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1 / 11 page  Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon limited) 61 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (See Fig.9) 43 A ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package limited) 30 IDM Pulsed Drain Current 240 PD @TC = 25°C Power Dissipation 120 W Linear Derating Factor 0.77 W/°C VGS Gate-to-Source Voltage ± 16 V EAS Single Pulse Avalanche Energy 200 mJ EAS (6 sigma) Single Pulse Avalanche Energy Tested Value 600 IAR Avalanche Current See Fig.12a, 12b, 15, 16 A EAR Repetitive Avalanche Energy mJ TJ Operating Junction and -55 to + 175 TSTG Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case ) °C IRLR3915 IRLU3915 Absolute Maximum Ratings Parameter Typ. Max. Units RθJC Junction-to-Case ––– 1.3 RθJA Junction-to-Ambient (PCB mount) ––– 50 °C/W RθJA Junction-to-Ambient––– 110 Thermal Resistance VDSS = 55V RDS(on) = 14mΩ ID = 30A Description Specifically designed for Automotive applications, thi Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this product are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features com- bine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. S D G Features ● Advanced Process Technology ● Ultra Low On-Resistance ● 175°C Operating Temperature ● Fast Switching ● Repetitive Avalanche Allowed up to Tjmax D-Pak IRLR3915 I-Pak IRLU3915 201408016 1 www.kersemi.com |
Similar Part No. - IRLU3915 |
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Similar Description - IRLU3915 |
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