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2SK3377 Datasheet(PDF) 6 Page - Renesas Technology Corp

Part # 2SK3377
Description  SWITCHING P-CHANNEL POWER MOS FET
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

2SK3377 Datasheet(HTML) 6 Page - Renesas Technology Corp

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Data Sheet D14328EJ5V0DS
4
2SK3377
FORWARD TRANSFER CHARACTERISTICS
VGS - Gate to Source Voltage - V
Pulsed
12
34
5
6
VDS = 10 V
10
1
0.1
100
1000
TA =
−55˚C
25˚C
75˚C
150˚C
Pulsed
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
VDS - Drain to Source Voltage - V
0
23
4
20
50
40
30
1
0
VGS =10 V
10
4.0 V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
ID - Drain Current - A
0.01
0.1
1
10
100
10
100
0.01
0.1
1
TA = 150˚C
75˚C
25˚C
−50˚C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
VGS - Gate to Source Voltage - V
02
4
6
8
10
12
14
16 18 20
40
50
0
100
60
20
10
30
80
70
90
ID = 10 A
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
ID - Drain Current - A
10
1
0.1
10
20
30
40
50
60
70
80
100
Pulsed
0
VGS = 4.0 V
10 V
GATE TO SOURCE THRESHOLD VOLTAGE vs.
CHANNEL TEMPERATURE
Tch - Channel Temperature - ˚C
0.5
VDS = 10 V
ID = 1 mA
1.0
1.5
2.0
2.5
3.0
−50
0
50
100
150
0


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