IRF5210L datasheet(1/10 Pages) IRF

Part #	IRF5210L

Description	Power MOSFET(Vdss=-100V, Rds(on)=0.06ohm, Id=-40A)

Download	10 Pages

Scroll/Zoom	100%

Manufacturer	IRF [International Rectifier]

Direct Link	http://www.irf.com

Logo

1 / 10 page

IRF5210S/L

HEXFET® Power MOSFET

PD - 91405C

l Advanced Process Technology

l Surface Mount (IRF5210S)

l Low-profile through-hole (IRF5210L)

l 175°C Operating Temperature

l Fast Switching

l P-Channel

l Fully Avalanche Rated

5/13/98

S

D

G

Absolute Maximum Ratings

Fifth Generation HEXFETs from International Rectifier utilize

advanced processing techniques to achieve extremely low

on-resistance per silicon area. This benefit, combined with

the fast switching speed and ruggedized device design that

HEXFET Power MOSFETs are well known for, provides the

designer with an extremely efficient and reliable device for

use in a wide variety of applications.

The D2Pak is a surface mount power package capable of

accommodatingdiesizesuptoHEX-4.Itprovidesthehighest

power capability and the lowest possible on-resistance in

any existing surface mount package. The D2Pak is suitable

for high current applications because of its low internal

connection resistance and can dissipate up to 2.0W in a

typical surface mount application.

The through-hole version (IRF5210L) is available for low-

profile applications.

Description

VDSS = -100V

RDS(on) = 0.06Ω

ID = -40A

2

D

P ak

TO-26 2

Parameter

Typ.

Max.

Units

RθJC

Junction-to-Case

–––

0.75

RθJA

Junction-to-Ambient ( PCB Mounted,steady-state)**

–––

40

Thermal Resistance

°C/W

Parameter

Max.

Units

ID @ TC = 25°C

Continuous Drain Current, VGS @ -10V

-40

ID @ TC = 100°C

Continuous Drain Current, VGS @ -10V

-29

A

IDM

Pulsed Drain Current

-140

PD @TA = 25°C

Power Dissipation

3.8

W

PD @TC = 25°C

Power Dissipation

200

W

Linear Derating Factor

1.3

W/°C

VGS

Gate-to-Source Voltage

± 20

V

EAS

Single Pulse Avalanche Energy

780

mJ

IAR

Avalanche Current

-21

A

EAR

Repetitive Avalanche Energy

20

mJ

dv/dt

Peak Diode Recovery dv/dt

-5.0

V/ns

TJ

Operating Junction and

-55 to + 175

TSTG

Storage Temperature Range

Soldering Temperature, for 10 seconds

300 (1.6mm from case )

°C

Similar Part No. - IRF5210L

Manufacturer	Part #	Datasheet	Description
Kersemi Electronic Co.,...	IRF5210L	738Kb / 8P	Advanced Process Technology
Inchange Semiconductor ...	IRF5210L	272Kb / 2P	isc P-Channel MOSFET Transistor
International Rectifier	IRF5210LPBF	696Kb / 10P	HEXFET Power MOSFET
International Rectifier	IRF5210LPBF	316Kb / 10P	Advanced Process Technology

More results

Similar Description - IRF5210L

Manufacturer	Part #	Datasheet	Description
International Rectifier	IRF5210	125Kb / 8P	Power MOSFET(Vdss=-100V, Rds(on)=0.06ohm, Id=-40A)
	IRF5305	124Kb / 8P	Power MOSFET(Vdss=-55V, Rds(on)=0.06ohm, Id=-31A)
	IRF5305S	171Kb / 10P	Power MOSFET(Vdss=-55V, Rds(on)=0.06ohm, Id=-31A)
	IRF9510S	176Kb / 6P	Power MOSFET(Vdss=-100V, Rds(on)=1.2ohm, Id=-4.0A)
	IRF520VS	129Kb / 10P	Power MOSFET(Vdss=100V, Rds(on)=0.165ohm, Id=9.6A)
	IRC540	222Kb / 8P	Power MOSFET(Vdss=100V, Rds(on)=0.077ohm, Id=28A)
	IRFRU5410	215Kb / 10P	Power MOSFET(Vdss=-100V, Rds(on)=0.205ohm, Id=-13A)
	IRF9520N	95Kb / 8P	Power MOSFET(Vdss=-100V, Rds(on)=0.48ohm, Id=-6.8A)
	IRF1310N	96Kb / 8P	Power MOSFET(Vdss=100V, Rds(on)=0.036ohm, Id=42A)
	IRF9530NS	173Kb / 10P	Power MOSFET(Vdss=-100V, Rds(on)=0.20ohm, Id=-14A)

More results

IRF5210L Datasheet(PDF) 1 Page - International Rectifier

IRF5210L Datasheet(HTML) 1 Page - International Rectifier

Similar Part No. - IRF5210L

Similar Description - IRF5210L

Html Pages

1 2 3 4 5 6 7 8 9 10

Datasheet Download

Link URL