 |
Electronic Components Datasheet Search |
|
|
Electronic Components Datasheet Search |
|
IRF540N Datasheet(PDF) 2 Page - International Rectifier |
|
||||||||||||||||||||||||||||||
IRF540N Datasheet(HTML) 2 Page - International Rectifier |
|
|
2 / 8 page  IRF540N 2 www.irf.com S D G Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) ––– ––– showing the ISM Pulsed Source Current integral reverse (Body Diode) ––– ––– p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.2 V TJ = 25°C, IS = 16A, VGS = 0V trr Reverse Recovery Time ––– 115 170 ns TJ = 25°C, IF = 16A Qrr Reverse Recovery Charge ––– 505 760 nC di/dt = 100A/µs ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Source-Drain Ratings and Characteristics 33 110 A Starting T J = 25°C, L =1.5mH RG = 25Ω, IAS = 16A. (See Figure 12) Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11) Notes: I SD ≤ 16A, di/dt ≤ 340A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C Pulse width ≤ 400µs; duty cycle ≤ 2%.
This is a typical value at device destruction and represents operation outside rated limits. This is a calculated value limited to TJ = 175°C . Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 100 ––– ––– VVGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.12 ––– V/°C Reference to 25°C, ID = 1mA RDS(on) Static Drain-to-Source On-Resistance ––– ––– 44 m Ω VGS = 10V, ID = 16A VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA gfs Forward Transconductance 21 ––– ––– SVDS = 50V, ID = 16A ––– ––– 25 µA VDS = 100V, VGS = 0V ––– ––– 250 VDS = 80V, VGS = 0V, TJ = 150°C Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V Gate-to-Source Reverse Leakage ––– ––– -100 nA VGS = -20V Qg Total Gate Charge ––– ––– 71 ID = 16A Qgs Gate-to-Source Charge ––– ––– 14 nC VDS = 80V Qgd Gate-to-Drain ("Miller") Charge ––– ––– 21 VGS = 10V, See Fig. 6 and 13 td(on) Turn-On Delay Time ––– 11 ––– VDD = 50V tr Rise Time ––– 35 ––– ID = 16A td(off) Turn-Off Delay Time ––– 39 ––– RG = 5.1Ω tf Fall Time ––– 35 ––– VGS = 10V, See Fig. 10 Between lead, ––– ––– 6mm (0.25in.) from package and center of die contact Ciss Input Capacitance ––– 1960 ––– VGS = 0V Coss Output Capacitance ––– 250 ––– VDS = 25V Crss Reverse Transfer Capacitance ––– 40 ––– pF ƒ = 1.0MHz, See Fig. 5 EAS Single Pulse Avalanche Energy ––– 700
185 mJ IAS = 16A, L = 1.5mH nH Electrical Characteristics @ TJ = 25°C (unless otherwise specified) LD Internal Drain Inductance LS Internal Source Inductance ––– ––– S D G IGSS ns 4.5 7.5 IDSS Drain-to-Source Leakage Current |
Similar Part No. - IRF540N |
|
Similar Description - IRF540N |
|
|
|
Link URL |
| Privacy Policy |
| ALLDATASHEET.NET |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
English ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
