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N0300P Datasheet(PDF) 5 Page - Renesas Technology Corp

Part # N0300P
Description  MOS FIELD EFFECT TRANSISTOR
Download  8 Pages
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

N0300P Datasheet(HTML) 5 Page - Renesas Technology Corp

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Data Sheet D19782EJ1V0DS
3
N0300P
TYPICAL CHARACTERISTICS (TA = 25
°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
0
20
40
60
80
100
120
0
25
50
75
100
125
150
175
TA - Ambient Temperature -
°C
0
0.25
0.5
0.75
1
1.25
1.5
0
25
50
75
100
125
150
175
Mounted on FR-4 board of
50 mm x 50 mm x 1.6 mmt
TA - Ambient Temperature -
°C
FORWARD BIAS SAFE OPERATING AREA
-0.01
-0.1
-1
-10
-100
-0.1
-1
-10
-100
ID(pulse)
ID(DC)
Mounted on FR-4 board of
50 mm x 50 mm x 1.6 mmt
1 ms
RD
S(
on
) L
im
ite
d
(V
GS
= −
1i0
V)
Single Pulse
PW
= 1
i
00
μs
10 ms
100 ms
5 s
VDS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1
10
100
1000
Without board
Mounted on FR-4 board of
50 mm x 50 mm x 1.6 mmt
Single Pulse
PW - Pulse Width - s
1 m
10 m
100 m
1
10
100
1000


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