N0301N_15 datasheet(3/8 Pages) RENESAS

Part #	N0301N

Description	MOS FIELD EFFECT TRANSISTOR

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Manufacturer	RENESAS [Renesas Technology Corp]

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MOS FIELD EFFECT TRANSISTOR

N0301N

N-CHANNEL MOS FIELD EFFECT TRANSISTOR

FOR SWITCHING

DATA SHEET

Document No.

D20202EJ1V0DS00 (1st edition)

Date Published

January 2010 NS

Printed in Japan

2010

DESCRIPTION

The N0301N is a switching device which can be driven directly by a 4.0 V

power source.

The N0301N features a low on-state resistance and excellent switching

characteristics, and is suitable for applications such as power switch of

portable machine and so on.

FEATURES

• 4.0 V drive available

• Low on-state resistance

RDS(on)1 = 36 m

Ω MAX. (VGS = 10 V, ID = 2.25 A)

RDS(on)2 = 50 m

Ω MAX. (VGS = 4.5 V, ID = 2.25 A)

RDS(on)3 = 130 m

Ω MAX. (VGS = 4.0 V, ID = 2.25 A)

• Built-in gate protection diode

ORDERING INFORMATION

PART NUMBER

LEAD PLATING

PACKING

PACKAGE

N0301N-T1-AT

Pure Sn (Tin)

Tape 3000 p/reel

SOT-23F

Marking: XU

ABSOLUTE MAXIMUM RATINGS (TA = 25°C)

Drain to Source Voltage (VGS = 0 V)

VDSS

30

V

Gate to Source Voltage (VDS = 0 V)

VGSS

±20

V

Drain Current (DC) (TA = 25°C)

ID(DC)

±4.5

A

Drain Current (pulse)

Note1

ID(pulse)

±18

A

Total Power Dissipation (TA = 25°C)

PT1

0.2

W

Total Power Dissipation (TA = 25°C)

Note2

PT2

1.3

W

Channel Temperature

Tch

150

°C

Storage Temperature

Tstg

–55 to +150

°C

Notes 1. PW

≤ 10

μs, Duty Cycle ≤ 1%

2. Mounted on FR-4 board of 50 mm

× 50 mm × 1.6 mm, copper foil 100%, t ≤ 5 sec.

Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When

this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated

voltage may be applied to this device.

EQUIVALENT CIRCUIT

Source

Body

Diode

Gate

Protection

Diode

Gate

Drain

PACKAGE DRAWING (Unit: mm)

2.9

±0.1

0.85

±0.05

0.165

±0.05

0 to 0.025

1.9

1

2

3

0.42

±0.05

1: Source

2: Gate

3: Drain

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