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N0302P Datasheet(PDF) 4 Page - Renesas Technology Corp |
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N0302P Datasheet(HTML) 4 Page - Renesas Technology Corp |
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4 / 8 page  Data Sheet D20205EJ1V0DS 2 N0302P ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Zero Gate Voltage Drain Current IDSS VDS = −30 V, VGS = 0 V −10 μA Gate Leakage Current IGSS VGS = m16 V, VDS = 0 V m10 μA Gate to Source Cut-off Voltage VGS(off) VDS = −10 V, ID = −1.0 mA −1.0 −2.5 V Forward Transfer AdmittanceNote | yfs | VDS = −10 V, ID = −2.2 A 2.0 S Drain to Source On-state ResistanceNote RDS(on)1 VGS = −10 V, ID = −2.2 A 35 54 m Ω RDS(on)2 VGS = −4.5 V, ID = −2.2 A 50 77 m Ω RDS(on)3 VGS = −4.0 V, ID = −2.2 A 60 150 m Ω Input Capacitance Ciss VDS = −10 V, 620 pF Output Capacitance Coss VGS = 0 V, 130 pF Reverse Transfer Capacitance Crss f = 1.0 MHz 100 pF Turn-on Delay Time td(on) VDD = −15 V, ID = −2.2 A, 8 ns Rise Time tr VGS = −10 V, 3 ns Turn-off Delay Time td(off) RG = 10 Ω 53 ns Fall Time tf 26 ns Total Gate Charge QG VDD = −24 V, 14 nC Gate to Source Charge QGS VGS = −10 V, 2.2 nC Gate to Drain Charge QGD ID = −4.4 A 4.4 nC Body Diode Forward VoltageNote VF(S-D) IF = 4.4 A, VGS = 0 V 0.88 V Reverse Recovery Time Trr IF = 4.4 A, VGS = 0 V, 29 ns Reverse Recovery Charge Qrr di/dt = 50 A/ μs 12 nC Note Pulsed TEST CIRCUIT 2 GATE CHARGE TEST CIRCUIT 1 SWITCHING TIME PG. RG 0 VGS (−) D.U.T. RL VDD τ = 1 s μ Duty Cycle ≤ 1% τ PG. 50 Ω D.U.T. RL VDD IG = −2 mA VGS Wave Form VDS Wave Form VGS (−) VDS (−) 10% 0 0 90% 90% 90% VGS VDS ton toff td(on) tr td(off) tf 10% 10% VGS Wave Form VDS Wave Form VGS (−) VDS (−) 10% 0 0 90% 90% 90% VGS VDS ton toff td(on) tr td(off) tf 10% 10% |
Similar Part No. - N0302P_15 |
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Similar Description - N0302P_15 |
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