IRF5M3205 datasheet(1/7 Pages) IRF

Part #	IRF5M3205

Description	POWER MOSFET N-CHANNEL(Vdss=55V, Rds(on)=0.015ohm, Id=35A)

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Manufacturer	IRF [International Rectifier]

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Absolute Maximum Ratings

Parameter

Units

ID @ VGS = 10V, TC = 25°C

Continuous Drain Current

35*

ID @ VGS = 10V, TC = 100°C Continuous Drain Current

35*

IDM

Pulsed Drain Current ➀

140

PD @ TC = 25°C

Max. Power Dissipation

125

W

Linear Derating Factor

1.0

W/°C

VGS

Gate-to-Source Voltage

±20

V

EAS

Single Pulse Avalanche Energy ➁

475

mJ

IAR

Avalanche Current ➀

35

A

EAR

Repetitive Avalanche Energy ➀

12.5

mJ

dv/dt

Peak Diode Recovery dv/dt ➂

2.6

V/ns

T J

Operating Junction

-55 to 150

TSTG

Storage Temperature Range

Lead Temperature

300 (0.063in./1.6mm from case for 10s)

Weight

9.3 (Typical)

g

oC

A

08/28/01

www.irf.com

1

Product Summary

Part Number

BVDSS

RDS(on)

ID

IRF5M3205

55V

0.015

Ω 35A*

For footnotes refer to the last page

HEXFET® POWER MOSFET

IRF5M3205

THRU-HOLE (TO-254AA)

55V, N-CHANNEL

Fifth Generation HEXFET®

power MOSFETs from

International Rectifier utilize advanced processing

techniques to achieve the lowest possible on-resistance

per silicon unit area. This benefit, combined with the

fast switching speed and ruggedized device design

that HEXFET power MOSFETs are well known for,

provides the designer with an extremely efficient device

for use in a wide variety of applications.

These devices are well-suited for applications such

as switching power supplies, motor controls, invert-

ers, choppers, audio amplifiers and high-energy pulse

circuits.

Features:

n Low RDS(on)

n Avalanche Energy Ratings

n Dynamic dv/dt Rating

n Simple Drive Requirements

n Ease of Paralleling

n Hermetically Sealed

n Light Weight

TO-254AA

* Current is limited by package

PD - 94292A

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