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IRF7807V Datasheet(PDF) 1 Page - International Rectifier |
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IRF7807V Datasheet(HTML) 1 Page - International Rectifier |
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1 / 8 page  Parameter Symbol IRF7807 V Units Drain-Source Voltage V DS 30 V Gate-Source Voltage V GS ±20 Continuous Drain or Source T A = 25°C I D 8.3 Current (V GS ≥ 4.5V) T A = 70°C 6.6 A Pulsed Drain Current I DM 66 Power Dissipation T A = 25°C P D 2.5 W T A = 70°C 1.6 Junction & Storage Temperature Range T J, TSTG –55 to 150 °C Continuous Source Current (Body Diode) I S 2.5 A Pulsed Source Current I SM 66 Absolute Maximum Ratings Parameter Max. Units Maximum Junction-to-Ambient R θJA 50 °C/W Maximum Junction-to-Lead R θJL 20 °C/W Thermal Resistance PD-94108 IRF7807V 3/1/01 IRF7807V R DS(on) 17m Ω Q G 9.5nC Q sw 3.4nC Q oss 12nC DEVICE CHARACTERISTICS • N Channel Application Specific MOSFET • Ideal for Mobile DC-DC Converters • Low Conduction Losses • Low Switching Losses Description This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduction of conduction and switching losses makes it ideal for high efficiency DC-DC Converters that power the latest generation of mobile microprocessors. A pair of IRF7807V devices provides the best cost/ performance solution for system voltages, such as 3.3V and 5V. To p V ie w 8 1 2 3 4 5 6 7 D D D D G S A S S SO-8 |
Similar Part No. - IRF7807V |
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Similar Description - IRF7807V |
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