PL10790EJ01V0DS datasheet(3/9 Pages) RENESAS

Part #	PL10790EJ01V0DS

Description	1 310 nm FOR LONG HAUL 2.5 Gb/s InGaAsP MQW-DFB LASER DIODE TOSA

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Manufacturer	RENESAS [Renesas Technology Corp]

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DATA SHEET

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LASER DIODE

NX8316XC

1 310 nm FOR LONG HAUL 2.5 Gb/s

InGaAsP MQW-DFB LASER DIODE TOSA

Document No. PL10790EJ01V0DS (1st edition)

Date Published March 2010 NS

Printed in Japan

2010

DESCRIPTION

The NX8316XC is a 1 310 nm Multiple Quantum Well (MQW) structured

Distributed Feed-Back (DFB) laser diode TOSA (transmitter optical sub-

assembly) with InGaAs monitor PIN-PD in a receptacle type package

designed for SFF/SFP transceiver with LC duplex receptacle.

APPLICATION

• STM-16 (S-16.1), SONET OC-48 (IR-1)

FEATURES

• Internal optical isolator

• Optical output power

Pf = 1.0 mW

• Low threshold current

lth = 10 mA TYP. @ TC = 25

°C

• Wide operating temperature range

TC =

−40 to +85°C

• InGaAs monitor PIN-PD

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Manufacturer	Part #	Datasheet	Description
California Eastern Labs	NX8315XC	194Kb / 6P	1 310 nm FOR LONG HAUL 2.5 Gb/s InGaAsP MQW-DFB LASER DIODE TOSA
Renesas Technology Corp	NX8316XC	219Kb / 9P	1 310 nm FOR LONG HAUL 2.5 Gb/s InGaAsP MQW-DFB LASER DIODE TOSA
	NX8313UD	212Kb / 9P	1 310 nm FOR LONG HAUL 2.5 Gb/s InGaAsP MQW-DFB LASER DIODE TOSA
	NX8316XC	219Kb / 9P	1 310 nm FOR LONG HAUL 2.5 Gb/s InGaAsP MQW-DFB LASER DIODE TOSA
California Eastern Labs	NX8313UD	315Kb / 8P	1 310 nm FOR LONG HAUL 2.5 Gb/s InGaAsP MQW-DFB LASER DIODE TOSA
Renesas Technology Corp	PL10789EJ01V0DS	219Kb / 9P	1 310 nm FOR LONG HAUL 2.5 Gb/s InGaAsP MQW-DFB LASER DIODE TOSA
Renesas Technology Corp	NX8315XC	219Kb / 9P	1 310 nm FOR LONG HAUL 2.5 Gb/s InGaAsP MQW-DFB LASER DIODE TOSA
California Eastern Labs	NX8316XC	195Kb / 6P	1 310 nm FOR LONG HAUL 2.5 Gb/s InGaAsP MQW-DFB LASER DIODE TOSA
Renesas Technology Corp	NX8315XC	219Kb / 9P	1 310 nm FOR LONG HAUL 2.5 Gb/s InGaAsP MQW-DFB LASER DIODE TOSA
Renesas Technology Corp	NX8511UD	208Kb / 9P	1 550 nm FOR LONG HAUL 2.5 Gb/s InGaAsP MQW-DFB LASER DIODE TOSA