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IRF4905 Datasheet(PDF) 1 Page - Kersemi Electronic Co., Ltd.

Part # IRF4905
Description  Advanced Process Technology
Download  8 Pages
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Manufacturer  KERSEMI [Kersemi Electronic Co., Ltd.]
Direct Link  http://www.kersemi.com
Logo KERSEMI - Kersemi Electronic Co., Ltd.

IRF4905 Datasheet(HTML) 1 Page - Kersemi Electronic Co., Ltd.

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IRF4905
Power MOSFET
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220
contribute to its wide acceptance throughout the
industry.
Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ -10V
-74
ID @ TC = 100°C
Continuous Drain Current, VGS @ -10V
-52
A
IDM
Pulsed Drain Current

-260
PD @TC = 25°C
Power Dissipation
200
W
Linear Derating Factor
1.3
W/°C
VGS
Gate-to-Source Voltage
± 20
V
EAS
Single Pulse Avalanche Energy
‚
930
mJ
IAR
Avalanche Current

-38
A
EAR
Repetitive Avalanche Energy

20
mJ
dv/dt
Peak Diode Recovery dv/dt
ƒ
-5.0
V/ns
TJ
Operating Junction and
-55 to + 175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
°C
Mounting torque, 6-32 or M3 screw
10 lbf•in (1.1N•m)
Absolute Maximum Ratings
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
–––
0.75
RθCS
Case-to-Sink, Flat, Greased Surface
0.50
–––
°C/W
RθJA
Junction-to-Ambient
–––
62
Thermal Resistance
VDSS = -55V
RDS(on) = 0.02Ω
ID = -74A
TO-220AB
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l P-Channel
l Fully Avalanche Rated
Description
S
D
G
2014-8-10
1
www.kersemi.com


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