IRF9Z34S/L

PD - 9.913A

2

D

P a k

T O - 262

8/25/97

S

D

G

Description

Third Generation HEXFETs from International Rectifier

utilize advanced processing techniques to achieve

extremely low

on-resistance per silicon area.

This

benefit, combined with the fast switching speed and

ruggedized device design that HEXFET Power MOSFETs

are well known for, provides the designer with an extremely

efficient and reliable device for use in a wide variety of

applications.

accommodating die sizes up to HEX-4. It provides the

highest power capability and the lowest possible on-

resistance in any existing surface mount package. The

its low internal connection resistance and can dissipate

up to 2.0W in a typical surface mount application.

The through-hole version (IRF9Z34L) is available for low-

profile applications.

Parameter

Max.

Units

…

-18

-13

A

Pulsed Drain Current

…

-72

Power Dissipation

3.7

W

Power Dissipation

88

W

Linear Derating Factor

0.59

W/°C

Gate-to-Source Voltage

± 20

V

Single Pulse Avalanche Energy

‚…

370

mJ

Avalanche Current



-18

A

Repetitive Avalanche Energy



8.8

mJ

dv/dt

Peak Diode Recovery dv/dt

ƒ…

-4.5

V/ns

Operating Junction and

-55 to + 175

Storage Temperature Range

Soldering Temperature, for 10 seconds

300 (1.6mm from case )

°C

Parameter

Typ.

Max.

Units

Junction-to-Case

–––

1.7

Junction-to-Ambient ( PCB Mounted,steady-state)**

–––

40

Thermal Resistance

°C/W

Absolute Maximum Ratings