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R2A20112ASP Datasheet(PDF) 6 Page - Renesas Technology Corp |
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R2A20112ASP Datasheet(HTML) 6 Page - Renesas Technology Corp |
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6 / 9 page  R2A20112ASP Preliminary R03DS0047EJ0100 Rev.1.00 Page 6 of 8 Jul 21, 2011 Electrical Characteristics (cont.) (Ta = 25°C, VCC = 12 V, RT = 33 k , RAMP = 820 pF, TM = 2.2 F, SS = 1.0 F, OCP = GND) Item Symbol Min Typ Max Unit Test Conditions Gate drive rise time tr-gd — 20 100 ns FB-COMP short CL = 100 pF tr 90% 10% Gate drive fall time tf-gd — 5 30 ns FB-COMP short CL = 100 pF tf 90% 10% Vol1-gd — 0.02 0.1 V Isink = 2 mA Gate drive low voltage Vol2-gd — 0.01 0.2 V Isink = 1 mA, VCC = 5 V Gate drive (GD-M & GD-S) Gate drive high voltage Voh-gd 11.5 11.9 — V Isource = –2 mA * 1 OCP threshold voltage Vocp 0.27 0.30 0.33 V Over current protection (OCP-M & OCP-S OCP source current Iocp –10 –5 –2.5 A OCP = 0 V ON/OFF timer threshold voltage Vtm 3.52 3.6 3.68 V ON/OFF timer hysteresis Hys-tm 2.1 2.2 2.3 V Charge current Isrc-tm –54 –45 –36 A TM = 2 V, OCP-M = 1 V Discharge current at TM disable condition Isnk-tm1 36 45 54 A TM = 2 V ON/OFF timer protection for Boost diode short Discharge current at TM enable condition Isnk-tm2 4.2 5 5.8 A TM = 5 V to 2 V Dynamic OVP threshold voltage Vdovp Vfb 1.035 Vfb 1.050 Vfb 1.065 V COMP = 2.5 V Static OVP threshold voltage Vsovp Vfb 1.075 Vfb 1.090 Vfb 1.105 V COMP = 2.5 V Static OVP hysteresis Hys-sovp 50 100 150 mV COMP = 2.5 V Dynamic UVP threshold voltage Vduvp — Vfb 0.930 Vfb 0.950 V COMP = 2.5 V * 1 FB low detect threshold voltage Vfblow 0.45 0.50 0.55 V COMP = 2.5 V PFC output abnormality protection FB low detect hysteresis Hysfblow 0.16 0.20 0.24 V COMP = 2.5 V Upper clamp voltage Vzcdh 4.0 4.5 5.0 V Isource = –3 mA Lower clamp voltage Vzcdl –0.5 –0.1 0.4 V Isink = 3 mA ZCD low threshold voltage Vzcd-lo 0.9 1.3 1.6 V * 1 ZCD hysteresis Hyszcd 130 300 410 mV * 1 Zero current detector (ZCD-M & ZCD-S) Input bias current Izcd –14 –10 –6 A 1.2 V < Vzcd < 2.5 V ZCD-S open detector Slave ZCD open detect delay time tzcds — 100 — ms ZCD-S: OPEN Gate drive 10 kHz * 1 Soft start Charge current Ic-ss –14 –10 –6 A SS = 3 V, FB = 1 V Restart Restart time delay Tstart 210 280 350 s ZCD-M = 10 k to GND ZCD-S = 10 k to GND *2 Notes: *1 Design spec *2 Tstart (280 μs) [ A period without ZCD-M trigger] Restart pulse width: 1 μs (Design spec) ZCD-M Vzcd-lo (1.3V: provide 300mV hysteresis) GD-M |
Similar Part No. - R2A20112ASP_15 |
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Similar Description - R2A20112ASP_15 |
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