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IRFIZ34N Datasheet(PDF) 2 Page - International Rectifier |
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IRFIZ34N Datasheet(HTML) 2 Page - International Rectifier |
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2 / 8 page  IRFIZ34N Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 55 ––– ––– V VGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.052 ––– V/°C Reference to 25°C, ID = 1mA RDS(on) Static Drain-to-Source On-Resistance ––– ––– 0.04 Ω VGS = 10V, ID = 11A VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA gfs Forward Transconductance 6.5 ––– ––– S VDS = 25V, ID = 16A ––– ––– 25 µA VDS = 55V, VGS = 0V ––– ––– 250 VDS = 44V, VGS = 0V, TJ = 150°C Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V Gate-to-Source Reverse Leakage ––– ––– -100 nA VGS = -20V Qg Total Gate Charge ––– ––– 34 ID = 16A Qgs Gate-to-Source Charge ––– ––– 6.8 nC VDS = 44V Qgd Gate-to-Drain ("Miller") Charge ––– ––– 14 VGS = 10V, See Fig. 6 and 13 td(on) Turn-On Delay Time ––– 7.0 ––– VDD = 28V tr Rise Time ––– 49 ––– ID = 16A td(off) Turn-Off Delay Time ––– 31 ––– RG = 18 Ω tf Fall Time ––– 40 ––– RD = 1.8Ω, See Fig. 10 Between lead, ––– ––– 6mm (0.25in.) from package and center of die contact Ciss Input Capacitance ––– 700 ––– VGS = 0V Coss Output Capacitance ––– 240 ––– VDS = 25V Crss Reverse Transfer Capacitance ––– 100 ––– ƒ = 1.0MHz, See Fig. 5 C Drain to Sink Capacitance ––– 12 ––– ƒ = 1.0MHz nH Electrical Characteristics @ TJ = 25°C (unless otherwise specified) LD Internal Drain Inductance LS Internal Source Inductance ––– ––– S D G IGSS ns 4.5 7.5 IDSS Drain-to-Source Leakage Current pF Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) VDD = 25V, starting TJ = 25°C, L = 610µH RG = 25Ω, IAS = 16A. (See Figure 12)
t=60s, ƒ=60Hz ISD ≤ 16A, di/dt ≤ 420A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C Uses IRFZ34N data and test conditions Pulse width ≤ 300µs; duty cycle ≤ 2%. S D G Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) ––– ––– showing the ISM Pulsed Source Current integral reverse (Body Diode) ––– ––– p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.6 V TJ = 25°C, IS = 11A, VGS = 0V trr Reverse Recovery Time ––– 57 86 ns TJ = 25°C, IF = 16A Qrr Reverse RecoveryCharge ––– 130 200 µC di/dt = 100A/µs ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Source-Drain Ratings and Characteristics A 21 100 |
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