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IRFNG50 Datasheet(PDF) 1 Page - International Rectifier

Part # IRFNG50
Description  POWER MOSFET N-CHANNEL(BVdss=1000V, Rds(on)=2.0ohm, Id=5.5A)
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Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

IRFNG50 Datasheet(HTML) 1 Page - International Rectifier

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Product Summary
Part Number
BVDSS
RDS(on)
ID
IRFNG50
1000V
2.0
Ω
5.5A
Features:
s
Avalanche Energy Rating
s
Dynamic dv/dt Rating
s
Simple Drive Requirements
s
Ease of Paralleling
s
Hermetically Sealed
s
Surface Mount
s
Light-weight
N-CHANNEL
Provisional Data Sheet No. PD-9.1556
1000 Volt, 2.0
Ω
Ω
Ω
Ω
Ω HEXFET
HEXFET technology is the key to International
Rectifier’s advanced line of power MOSFET transis-
tors. The efficient geometry achieves very low on-
state resistance combined with high transconductance.
HEXFET transistors also feature all of the well-es-
tablish advantages of MOSFETs, such as voltage
control, very fast switching, ease of paralleling and
electrical parameter temperature stability. They are
well-suited for applications such as switching power
supplies, motor controls, inverters, choppers, audio
amplifiers, and high energy pulse circuits.
The Surface Mount Device (SMD-1) package repre-
sents another step in the continual evolution of sur-
face mount technology. The SMD-1 will give
designers the extra flexibility they need to increase
circuit board density. International Rectifier has en-
gineered the SMD-1 package to meet the specific
needs of the power market by increasing the size of
the termination pads, thereby enhancing thermal and
electrical performance.
IRFNG50
HEXFET® POWER MOSFET
Absolute Maximum Ratings
Parameter
IRFNG50
Units
ID @ VGS = 10V, TC = 25°C
Continuous Drain Current
5.5
ID @ VGS = 10V, TC = 100°C Continuous Drain Current
3.5
IDM
Pulsed Drain Current Œ
22
PD @ TC = 25°C
Max. Power Dissipation
150
W
Linear Derating Factor
1.2
W/K 
VGS
Gate-to-Source Voltage
±20
V
EAS
Single Pulse Avalanche Energy 
860
mJ
IAR
Avalanche Current Œ
5.5
A
EAR
Repetitive Avalanche Energy Œ
15.0
mJ
dv/dt
Peak Diode Recovery dv/dt Ž
1.0
V/ns
TJ
Operating Junction
-55 to 150
TSTG
Storage Temperature Range
Package Mounting Surface Temperature
300 (for 5 seconds)
Weight
2.6 (typical)
g
oC
A
Next Data Sheet
Index
Previous Datasheet
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