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IRFP048N Datasheet(PDF) 1 Page - International Rectifier

Part # IRFP048N
Description  Power MOSFET(Vdss=55V, Rds(on)=0.016ohm, Id=64A)
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Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

IRFP048N Datasheet(HTML) 1 Page - International Rectifier

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IRFP048N
HEXFET® Power MOSFET
PD - 9.1409A
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The TO-247 package is preferred for commercial-
industrial applications where higher power levels
preclude the use of TO-220 devices. The TO-247 is
similar but superior to the earlier TO-218 package
because of its isolated mounting hole.
S
D
G
VDSS = 55V
RDS(on) = 0.016Ω
ID = 64A
l Advanced Process Technology
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
Description
TO-247AC
Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
64
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V
45
A
IDM
Pulsed Drain Current
…
210
PD @TC = 25°C
Power Dissipation
140
W
Linear Derating Factor
0.90
W/°C
VGS
Gate-to-Source Voltage
± 20
V
EAS
Single Pulse Avalanche Energy
‚…
270
mJ
IAR
Avalanche Current
…
32
A
EAR
Repetitive Avalanche Energy

14
mJ
dv/dt
Peak Diode Recovery dv/dt
ƒ…
5.0
V/ns
TJ
Operating Junction and
-55 to + 175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
°C
Mounting torque, 6-32 or M3 srew
10 lbf•in (1.1N•m)
Absolute Maximum Ratings
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
–––
1.1
RθCS
Case-to-Sink, Flat, Greased Surface
0.24
–––
°C/W
RθJA
Junction-to-Ambient
–––
40
Thermal Resistance
8/25/97


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