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RJH60F6DPQ-A0 Datasheet(PDF) 4 Page - Renesas Technology Corp

Part # RJH60F6DPQ-A0
Description  600 V - 45 A - IGBT High Speed Power Switching
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

RJH60F6DPQ-A0 Datasheet(HTML) 4 Page - Renesas Technology Corp

  RJH60F6DPQ-A0_15 Datasheet HTML 1Page - Renesas Technology Corp RJH60F6DPQ-A0_15 Datasheet HTML 2Page - Renesas Technology Corp RJH60F6DPQ-A0_15 Datasheet HTML 3Page - Renesas Technology Corp RJH60F6DPQ-A0_15 Datasheet HTML 4Page - Renesas Technology Corp RJH60F6DPQ-A0_15 Datasheet HTML 5Page - Renesas Technology Corp RJH60F6DPQ-A0_15 Datasheet HTML 6Page - Renesas Technology Corp RJH60F6DPQ-A0_15 Datasheet HTML 7Page - Renesas Technology Corp RJH60F6DPQ-A0_15 Datasheet HTML 8Page - Renesas Technology Corp  
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RJH60F6DPQ-A0
Preliminary
R07DS0327EJ0200 Rev.2.00
Page 4 of 7
Jul 22, 2011
1
10
100
1000
10000
0100
50
150
200
250
300
Gate Charge Qg (nc)
Dynamic Input Characteristics (Typical)
Typical Capacitance vs.
Collector to Emitter Voltage
800
600
400
200
0
0
16
12
8
4
0
40
80
120
160
IC = 25 A
Ta = 25°C
VGE
VCE
VCC = 600 V
300 V
VCC = 600 V
300 V
Collector to Emitter Voltage VCE (V)
Cies
Coes
Cres
VGE = 0 V
f = 1 MHz
Ta = 25°C
0
20
40
60
80
100
0123
4
VGE = 0 V
Ta = 25°C
Pulse Test
C-E Diode Forward Voltage VCEF (V)
Forward Current vs. Forward Voltage (Typical)


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