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IRFP27N60K Datasheet(PDF) 2 Page - International Rectifier |
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IRFP27N60K Datasheet(HTML) 2 Page - International Rectifier |
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2 / 8 page  IRFP27N60K 2 www.irf.com Symbol Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) ––– ––– showing the ISM Pulsed Source Current integral reverse (Body Diode) ––– ––– p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.5 V TJ = 25°C, IS = 27A, VGS = 0V trr Reverse Recovery Time ––– 620 920 ns TJ = 25°C, IF = 27A Qrr Reverse RecoveryCharge ––– 11 16 µC di/dt = 100A/µs IRRM Reverse RecoveryCurrent ––– 36 53 A ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Symbol Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance 14 ––– ––– SVDS = 50V, ID = 16A Qg Total Gate Charge ––– ––– 180 ID = 27A Qgs Gate-to-Source Charge ––– ––– 56 nC VDS = 480V Qgd Gate-to-Drain ("Miller") Charge ––– ––– 86 VGS = 10V, See Fig. 6 and 13 td(on) Turn-On Delay Time ––– 27 ––– VDD = 300V tr Rise Time ––– 110 ––– ID = 27A td(off) Turn-Off Delay Time ––– 43 ––– RG = 4.3Ω tf Fall Time ––– 38 ––– VGS = 10V,See Fig. 10 Ciss Input Capacitance ––– 4660 ––– VGS = 0V Coss Output Capacitance ––– 460 ––– VDS = 25V Crss Reverse Transfer Capacitance ––– 41 ––– pF ƒ = 1.0MHz, See Fig. 5 Coss Output Capacitance ––– 5490 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz Coss Output Capacitance ––– 120 ––– VGS = 0V, VDS = 480V, ƒ = 1.0MHz Coss eff. Effective Output Capacitance ––– 250 ––– VGS = 0V, VDS = 0V to 480V Dynamic @ TJ = 25°C (unless otherwise specified) ns S D G Diode Characteristics 27 110 A Symbol Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 600 ––– ––– VVGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.64 ––– V/°C Reference to 25°C, ID = 1mA RDS(on) Static Drain-to-Source On-Resistance ––– 180 220 m Ω VGS = 10V, ID = 16A VGS(th) Gate Threshold Voltage 3.0 ––– 5.0 V VDS = VGS, ID = 250µA ––– ––– 50 µA VDS = 600V, VGS = 0V ––– ––– 250 VDS = 480V, VGS = 0V, TJ = 125°C Gate-to-Source Forward Leakage ––– ––– 100 VGS = 30V Gate-to-Source Reverse Leakage ––– ––– -100 nA VGS = -30V Static @ TJ = 25°C (unless otherwise specified) IGSS IDSS Drain-to-Source Leakage Current Repetitive rating; pulse width limited by max. junction temperature. (See Fig. 11) I SD ≤ 27A, di/dt ≤ 390A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C. Notes: Starting T J = 25°C, L = 1.4mH, RG = 25Ω, IAS = 27A, dv/dt = 13V/ns. (See Figure 12a) Pulse width ≤ 300µs; duty cycle ≤ 2%.
Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. |
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