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SMG2302 Datasheet(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH |
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SMG2302 Datasheet(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH |
2 / 4 page Elektronische Bauelemente SMG2302 3.2A, 20V,RDS(ON) 85m N-Channel Enhancement Mode Power Mos.FET Electrical Characteristics( Tj=25 C Unless otherwise specified) Total Gate Charge RDS(ON) http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual Parameter Symbol Max. Typ. Test Condition Min. Unit Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Gate Threshold Voltage Gate-Source Leakage Current Drain-Source Leakage Current (Tj=25 ) Static Drain-Source On-Resistance Drain-Source Leakage Current (Tj=70 ) Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance BVDSS BVDS/ Tj VGS(th) IGSS IDSS Crss Qg Qgs Qgd Td(ON) Td(Off) Tr Ciss Coss Tf 20 0.1 0.5 1.2 100 1 10 85 115 4.4 0.6 1.9 5.2 37 15 5.7 145 100 50 ± V V/ V nA uA uA m nC nS pF Ω VGS=0V VDS=10V f=1.0MHz VDD=10V ID=3.6A VGS=5V RG=6 RD=2.8 Ω Ω ID=3.6A VDS=10V VGS=4.5V VGS=4.5V, ID=3.6A VGS=2.5V, ID=3.1A VGS=0V, ID=250uA VGS= 12V ± VDS=20V,VGS=0 VDS=20V,VGS=0 VDS=VGS, ID=250uA Reference to 25 ,ID=1mA _ _ _ Source-Drain Diode _ _ _ _ _ _ _ Parameter Symbol Max. Typ. Test Condition Min. Unit Forward On Voltage Continuous Source Current (Body Diode) VSD Is _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ IS=1.6A, VGS=0V. VD=VG G =0V, VS=1.2V V A 1.2 1 Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width 300us, dutycycle 2%. ≦ ≦ 2 3.Surface mounted on 1 inch2 copper pad of FR4 board; 270 when mounted on min. copper pad. ° C/W Forward Transconductance Gfs S 6 VDS=5V, ID=3.6A _ _ _ _ _ _ Pulsed Source Current (Body Diode) ISM 10 A _ C o o C o C o C o 2 2 2 Ω 01-Jun-2002 Rev. A Page 2 of 4 |
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Similar Description - SMG2302_15 |
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