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IRFRU3910 Datasheet(PDF) 2 Page - International Rectifier |
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IRFRU3910 Datasheet(HTML) 2 Page - International Rectifier |
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2 / 10 page  IRFR/U3910 2 www.irf.com Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 100 ––– ––– V VGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.12 ––– V/°C Reference to 25°C, ID = 1mA ––– ––– 0.115 VGS = 10V, ID = 10A VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA gfs Forward Transconductance 6.4 ––– ––– S VDS = 50V, ID = 9.0A ––– ––– 25 µA VDS = 100V, VGS = 0V ––– ––– 250 VDS = 80V, VGS = 0V, TJ = 150°C Gate-to-Source Forward Leakage ––– ––– 100 nA VGS = 20V Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V Qg Total Gate Charge ––– ––– 44 ID = 9.0A Qgs Gate-to-Source Charge ––– ––– 6.2 nC VDS = 80V Qgd Gate-to-Drain ("Miller") Charge ––– ––– 21 VGS = 10V, See Fig. 6 and 13 td(on) Turn-On Delay Time ––– 6.4 ––– VDD = 50V tr Rise Time ––– 27 ––– ns ID = 9.0A td(off) Turn-Off Delay Time ––– 37 ––– RG = 12Ω tf Fall Time ––– 25 ––– RD = 5.5Ω, See Fig. 10 Between lead, 6mm (0.25in.) from package and center of die contact Ciss Input Capacitance ––– 640 ––– VGS = 0V Coss Output Capacitance ––– 160 ––– pF VDS = 25V Crss Reverse Transfer Capacitance ––– 88 ––– ƒ = 1.0MHz, See Fig. 5 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) nH IGSS S D G LS Internal Source Inductance ––– 7.5 ––– RDS(on) Static Drain-to-Source On-Resistance LD Internal Drain Inductance ––– 4.5 ––– IDSS Drain-to-Source Leakage Current S D G Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) ––– ––– showing the ISM Pulsed Source Current integral reverse (Body Diode) ––– ––– p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 9.0A, VGS = 0V trr Reverse Recovery Time ––– 130 190 ns TJ = 25°C, IF = 9.0A Qrr Reverse RecoveryCharge ––– 650 970 nC di/dt = 100A/µs ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Source-Drain Ratings and Characteristics A 16 60 Notes: V DD = 25V, starting TJ = 25°C, L = 3.1mH RG = 25Ω, IAS = 9.0A. (See Figure 12) Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) ** When mounted on 1" square PCB (FR-4 or G-10 Material ) . For recommended footprint and soldering techniques refer to application note #AN-994 I SD ≤ 9.0A, di/dt ≤ 520A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C Uses IRF530N data and test conditions
This is applied for I-PAK, Ls of D-PAK is measured between lead and center of die contact Pulse width ≤ 300µs; duty cycle ≤ 2% |
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