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IRFR5305 Datasheet(PDF) 2 Page - International Rectifier |
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IRFR5305 Datasheet(HTML) 2 Page - International Rectifier |
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2 / 10 page  IRFR/U5305 2 www.irf.com Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) ––– ––– showing the ISM Pulsed Source Current integral reverse (Body Diode) ––– ––– p-n junction diode. VSD Diode Forward Voltage ––– ––– -1.3 V TJ = 25°C, IS = -16A, VGS = 0V trr Reverse Recovery Time ––– 71 110 ns TJ = 25°C, IF = -16A Qrr Reverse RecoveryCharge ––– 170 250 nC di/dt = -100A/µs Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage -55 ––– ––– V VGS = 0V, ID = -250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– -0.034 ––– V/°C Reference to 25°C, ID = -1mA RDS(on) Static Drain-to-Source On-Resistance ––– ––– 0.065 Ω VGS = -10V, ID = -16A VGS(th) Gate Threshold Voltage -2.0 ––– -4.0 V VDS = VGS, ID = -250µA gfs Forward Transconductance 8.0 ––– ––– S VDS = -25V, ID = -16A ––– ––– -25 µA VDS = -55V, VGS = 0V ––– ––– -250 VDS = -44V, VGS = 0V, TJ = 150°C Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V Gate-to-Source Reverse Leakage ––– ––– -100 nA VGS = -20V Qg Total Gate Charge ––– ––– 63 ID = -16A Qgs Gate-to-Source Charge ––– ––– 13 nC VDS = -44V Qgd Gate-to-Drain ("Miller") Charge ––– ––– 29 VGS = -10V, See Fig. 6 and 13 td(on) Turn-On Delay Time ––– 14 ––– VDD = -28V tr Rise Time ––– 66 ––– ID = -16A td(off) Turn-Off Delay Time ––– 39 ––– RG = 6.8Ω tf Fall Time ––– 63 ––– RD = 1.6Ω, See Fig. 10 Between lead, ––– ––– 6mm (0.25in.) from package and center of die contact Ciss Input Capacitance ––– 1200 ––– VGS = 0V Coss Output Capacitance ––– 520 ––– pF VDS = -25V Crss Reverse Transfer Capacitance ––– 250 ––– ƒ = 1.0MHz, See Fig. 5 nH Electrical Characteristics @ TJ = 25°C (unless otherwise specified) LD InternalDrainInductance LS Internal Source Inductance ––– ––– IGSS ns 4.5 7.5 IDSS Drain-to-Source Leakage Current Repetitive rating; pulse width limited by max. junction temperature. (See Fig. 11) ISD ≤ -16A, di/dt ≤ -280A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C Notes: VDD = -25V, starting TJ = 25°C, L = 2.1mH RG = 25Ω, IAS = -16A. (See Figure 12) Pulse width ≤ 300µs; duty cycle ≤ 2%. -31 -110 A S D G S D G
This is applied for I-PAK, LS of D-PAK is measured between lead and center of die contact. Uses IRF5305 data and test conditions. * When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994. ** Uses typical socket mount. |
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