SMUN5311DW_15 datasheet(1/28 Pages) SECOS

Part #	SMUN5311DW

Description	Digital Small Signal Transistors

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Manufacturer	SECOS [SeCoS Halbleitertechnologie GmbH]

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Elektronische Bauelemente

SMUN5311DW Series

NPN / PNP

Digital Small Signal Transistors

18-Dec-2009 Rev. A

Page 1 of 28

1

3

2

6

4

5

Q1

Q2

R1

R2

R1

R2

RoHS Compliant Product

A suffix of “-C” indicates halogen-free.

DESCRIPTION

The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic

bias network consisting of two resistors; a series base resistor and a base−emitter

resistor. These digital transistors are designed to replace a single device and its

external resistor bias network. The BRT eliminates these individual components by

integrating them into a single device. In the SMUN5311DW series, two

complementary BRT devices are housed in the SOT−363 package which is ideal

for low power surface mount applications where board space is at a premium.

FEATURE

Simplifies circuit design

Reduces board space

Reduces component count

Available in 8 mm, 7 inch/3000 unit tape and reel

The devices are Pb-Free

MAXIMUM RATINGS AND THERMAL CHARACTERISTICS

(TA = 25°C unless otherwise noted, common for Q1 and Q 2, minus sign for Q1(PNP) omitted)

PARAMETER

SYMBOL

VALUE

UNIT

Collector - Base Voltage

VCBO

50

Vdc

Collector - Emitter Voltage

VCEO

50

Vdc

Collector Currrent – Continuous

IC

100

mAdc

ONE JUNCTION HEATED THERMAL CHARACTERISTICS

Total Device Dissipation, TA=25°C

187(1)

256(2)

mW

Total Device Dissipation, Derate above 25°C

PD

1.5(1)

2.0(2)

mW/°C

Thermal Resistance, Junction to Ambient

R

θJA

670(1)

490(2)

°C/W

BOTH JUNCTION HEATED THERMAL CHARACTERISTICS

Total Device Dissipation, TA=25°C

250(1)

385(2)

mW

Total Device Dissipation, Derate above 25°C

PD

2.0(1)

3.0(2)

mW/°C

Thermal Resistance, Junction to Ambient

R

θJA

493(1)

325(2)

°C/W

Thermal Resistance, Junction to Lead

R

θJL

188(1)

208(2)

°C/W

Junction Temperature & Storage Temperature

TJ,TSTG

-55~150

°C

Note:

1.

FR-4 @ minimum pad

2.

FR-4 @ 1.0 x 1.0 inch pad

SOT-363

B

L

F

H

C

J

D G

K

A

E

Millimeter

REF.

Min.

Max.

REF.

Min.

Max.

A

2.00

2.20

G

0.100 REF.

B

2.15

2.45

H

0.525 REF.

C

1.15

1.35

J

0.08

0.15

D

0.90

1.10

K

8°

E

1.20

1.40

L

0.650 TYP.

F

0.15

0.35

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SMUN5311DW Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH

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