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IRG4BC20SD Datasheet(PDF) 2 Page - International Rectifier |
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IRG4BC20SD Datasheet(HTML) 2 Page - International Rectifier |
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2 / 10 page  IRG4BC20SD 2 www.irf.com Parameter Min. Typ. Max. Units Conditions Qg Total Gate Charge (turn-on) — 27 40 IC = 10A Qge Gate - Emitter Charge (turn-on) — 4.3 6.5 nC VCC = 400V See Fig. 8 Qgc Gate - Collector Charge (turn-on) — 10 15 VGE = 15V td(on) Turn-On Delay Time — 62 — TJ = 25°C tr Rise Time — 32 — ns IC = 10A, VCC = 480V td(off) Turn-Off Delay Time — 690 1040 VGE = 15V, RG = 50Ω tf Fall Time — 480 730 Energy losses include "tail" and Eon Turn-On Switching Loss — 0.32 — diode reverse recovery. Eoff Turn-Off Switching Loss — 2.58 — mJ See Fig. 9, 10, 11,18 Ets Total Switching Loss — 2.90 4.5 td(on) Turn-On Delay Time — 64 — TJ = 150°C, See Fig. 10,11, 18 tr Rise Time — 35 — ns IC = 10A, VCC = 480V td(off) Turn-Off Delay Time — 980 — VGE = 15V, RG = 50Ω tf Fall Time — 800 — Energy losses include "tail" and Ets Total Switching Loss — 4.33 — mJ diode reverse recovery. LE Internal Emitter Inductance — 7.5 — nH Measured 5mm from package Cies Input Capacitance — 550 — VGE = 0V Coes Output Capacitance — 39 — pF VCC = 30V See Fig. 7 Cres Reverse Transfer Capacitance — 7.1 — ƒ = 1.0MHz trr Diode Reverse Recovery Time — 37 55 ns TJ = 25°C See Fig. —55 90 TJ = 125°C 14 IF = 8.0A Irr Diode Peak Reverse Recovery Current — 3.5 5.0 A TJ = 25°C See Fig. — 4.5 8.0 TJ = 125°C 15 VR = 200V Qrr Diode Reverse Recovery Charge — 65 138 nC TJ = 25°C See Fig. — 124 360 TJ = 125°C 16 di/dt = 200Aµs di(rec)M/dt Diode Peak Rate of Fall of Recovery — 240 — A/µs TJ = 25°C See Fig. During tb — 210 — TJ = 125°C 17 Parameter Min. Typ. Max. Units Conditions V(BR)CES Collector-to-Emitter Breakdown Voltageƒ 600 — — V VGE = 0V, IC = 250µA ∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage — 0.75 — V/°C VGE = 0V, IC = 1.0mA VCE(on) Collector-to-Emitter Saturation Voltage — 1.40 1.6 IC = 10A VGE = 15V — 1.85 — V IC = 19A See Fig. 2, 5 — 1.44 — IC = 10A, TJ = 150°C VGE(th) Gate Threshold Voltage 3.0 — 6.0 VCE = VGE, IC = 250µA ∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage — -11 — mV/°C VCE = VGE, IC = 250µA gfe Forward Transconductance 2.0 5.8 — S VCE = 100V, IC = 10A ICES Zero Gate Voltage Collector Current — — 250 µA VGE = 0V, VCE = 600V — — 1700 VGE = 0V, VCE = 600V, TJ = 150°C VFM Diode Forward Voltage Drop — 1.4 1.7 V IC = 8.0A See Fig. 13 — 1.3 1.6 IC = 8.0A, TJ = 150°C IGES Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Electrical Characteristics @ TJ = 25°C (unless otherwise specified) |
Similar Part No. - IRG4BC20SD |
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Similar Description - IRG4BC20SD |
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