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IRG4PH50KD Datasheet(PDF) 2 Page - International Rectifier |
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IRG4PH50KD Datasheet(HTML) 2 Page - International Rectifier |
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2 / 10 page  IRG4PH50KD 2 www.irf.com Parameter Min. Typ. Max. Units Conditions Qg Total Gate Charge (turn-on) — 180 270 IC = 24A Qge Gate - Emitter Charge (turn-on) — 25 38 nC VCC = 400V See Fig.8 Qgc Gate - Collector Charge (turn-on) — 70 110 VGE = 15V td(on) Turn-On Delay Time — 87 — tr Rise Time — 100 — TJ = 25°C td(off) Turn-Off Delay Time — 140 300 IC = 24A, VCC = 800V tf Fall Time — 200 300 VGE = 15V, RG = 5.0 Ω Eon Turn-On Switching Loss — 3.83 — Energy losses include "tail" Eoff Turn-Off Switching Loss — 1.90 — mJ and diode reverse recovery Ets Total Switching Loss — 5.73 7.9 See Fig. 9,10,18 tsc Short Circuit Withstand Time 10 —— µs VCC = 720V, TJ = 125°C VGE = 15V, RG = 5.0 Ω td(on) Turn-On Delay Time — 67 — TJ = 150°C, See Fig. 10,11,18 tr Rise Time — 72 — IC = 24A, VCC = 800V td(off) Turn-Off Delay Time — 310 — VGE = 15V, RG = 5.0 Ω, tf Fall Time — 390 — Energy losses include "tail" Ets Total Switching Loss — 8.36 — mJ and diode reverse recovery LE Internal Emitter Inductance — 13 — nH Measured 5mm from package Cies Input Capacitance — 2800 — VGE = 0V Coes Output Capacitance — 140 — pF VCC = 30V See Fig. 7 Cres Reverse Transfer Capacitance — 53 —ƒ = 1.0MHz trr Diode Reverse Recovery Time — 90 135 ns TJ = 25°C See Fig. — 164 245 TJ = 125°C 14 IF = 16A Irr Diode Peak Reverse Recovery Current — 5.8 10 A TJ = 25°C See Fig. — 8.3 15 TJ = 125°C 15 VR = 200V Qrr Diode Reverse Recovery Charge — 260 675 nC TJ = 25°C See Fig. — 680 1838 TJ = 125°C 16 di/dt = 200A/µs di(rec)M/dt Diode Peak Rate of Fall of Recovery — 120 — A/µs TJ = 25°C See Fig. During tb — 76 — TJ = 125°C 17 Switching Characteristics @ TJ = 25°C (unless otherwise specified) ns ns Parameter Min. Typ. Max. Units Conditions V(BR)CES Collector-to-Emitter Breakdown Voltage S 1200 —— VVGE = 0V, IC = 250µA ∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage — 0.91 — V/°CVGE = 0V, IC = 1.0mA VCE(on) Collector-to-Emitter Saturation Voltage — 2.77 3.5 IC = 24A VGE = 15V — 3.28 — VIC = 45A See Fig. 2, 5 — 2.54 — IC = 24A, TJ = 150°C VGE(th) Gate Threshold Voltage 3.0 — 6.0 VCE = VGE, IC = 250µA ∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage — -10 — mV/°CVCE = VGE, IC = 250µA gfe Forward Transconductance T 13 19 — SVCE = 100V, IC = 24A ICES Zero Gate Voltage Collector Current —— 250 µA VGE = 0V, VCE = 1200V —— 6500 VGE = 0V, VCE = 1200V, TJ = 150°C VFM Diode Forward Voltage Drop — 2.5 3.5 V IC = 16A See Fig. 13 — 2.1 3.0 IC = 16A, TJ = 150°C IGES Gate-to-Emitter Leakage Current —— ±100 nA VGE = ±20V Electrical Characteristics @ TJ = 25°C (unless otherwise specified) |
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