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IRGBC20UD2 Datasheet(PDF) 2 Page - International Rectifier |
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IRGBC20UD2 Datasheet(HTML) 2 Page - International Rectifier |
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2 / 8 page  C-694 Parameter Min. Typ. Max. Units Conditions Qg Total Gate Charge (turn-on) — 16 22 IC = 6.5A Qge Gate - Emitter Charge (turn-on) — 2.5 3.8 nC VCC = 400V Qgc Gate - Collector Charge (turn-on) — 7.8 13 See Fig. 8 td(on) Turn-On Delay Time — 60 — TJ = 25°C tr Rise Time — 29 — ns IC = 6.5A, V CC = 480V td(off) Turn-Off Delay Time — 130 200 VGE = 15V, RG = 50Ω tf Fall Time — 65 120 Energy losses include "tail" and Eon Turn-On Switching Loss — 0.21 — diode reverse recovery. Eoff Turn-Off Switching Loss — 0.22 — mJ See Fig. 9, 10, 11, 18 Ets Total Switching Loss — 0.43 0.65 td(on) Turn-On Delay Time — 60 — TJ = 150°C, See Fig. 9, 10, 11, 18 tr Rise Time — 30 — ns IC = 6.5A, V CC = 480V td(off) Turn-Off Delay Time — 210 — VGE = 15V, RG = 50Ω tf Fall Time — 180 — Energy losses include "tail" and Ets Total Switching Loss — 0.71 — mJ diode reverse recovery. LE Internal Emitter Inductance — 7.5 — nH Measured 5mm from package Cies Input Capacitance — 330 — VGE = 0V Coes Output Capacitance — 65 — pF VCC = 30V See Fig. 7 Cres Reverse Transfer Capacitance — 6.0 — ƒ = 1.0MHz trr Diode Reverse Recovery Time — 37 55 ns TJ = 25°C See Fig. — 55 90 TJ = 125°C 14 IF = 8.0A Irr Diode Peak Reverse Recovery Current — 3.5 5.0 A TJ = 25°C See Fig. — 4.5 8.0 TJ = 125°C 15 V R = 200V Qrr Diode Reverse Recovery Charge — 65 138 nC TJ = 25°C See Fig. — 124 360 TJ = 125°C 16 di/dt = 200A/µs di(rec)M/dt Diode Peak Rate of Fall of Recovery — 240 — A/µs TJ = 25°C See Fig. During tb — 210 — TJ = 125°C 17 Parameter Min. Typ. Max. Units Conditions V(BR)CES Collector-to-Emitter Breakdown Voltage 600 — — V VGE = 0V, IC = 250µA ∆V(BR)CES/∆TJ Temp. Coeff. of Breakdown Voltage — 0.69 — V/°C VGE = 0V, IC = 1.0mA VCE(on) Collector-to-Emitter Saturation Voltage — 2.2 3.0 IC = 6.5A VGE = 15V — 2.8 — V IC = 13A See Fig. 2, 5 — 2.5 — IC = 6.5A, T J = 150°C VGE(th) Gate Threshold Voltage 3.0 — 5.5 VCE = VGE, IC = 250µA ∆VGE(th)/∆TJ Temp. Coeff. of Threshold Voltage — -11 — mV/°C VCE = VGE, IC = 250µA gfe Forward Transconductance 1.4 4.3 — S VCE = 100V, IC = 6.5A ICES Zero Gate Voltage Collector Current — — 250 µA VGE = 0V, VCE = 600V — — 1700 VGE = 0V, VCE = 600V, T J = 150°C VFM Diode Forward Voltage Drop — 1.4 1.7 V IC = 8.0A See Fig. 13 — 1.3 1.6 IC = 8.0A, T J = 150°C IGES Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±20V IRGBC20UD2 Pulse width ≤ 80µs; duty factor ≤ 0.1%. VCC=80%(VCES), VGE=20V, L=10µH, RG= 50Ω, ( See fig. 19 ) Pulse width 5.0µs, single shot. Switching Characteristics @ TJ = 25°C (unless otherwise specified) Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Repetitive rating; V GE=20V, pulse width limited by max. junction temperature. ( See fig. 20 ) Notes: Next Data Sheet Index Previous Datasheet To Order |
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