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IRGBC30UD2 Datasheet(PDF) 2 Page - International Rectifier |
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IRGBC30UD2 Datasheet(HTML) 2 Page - International Rectifier |
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2 / 8 page  C-702 Parameter Min. Typ. Max. Units Conditions Qg Total Gate Charge (turn-on) — 29 36 IC = 12A Qge Gate - Emitter Charge (turn-on) — 4.8 6.8 nC VCC = 400V Qgc Gate - Collector Charge (turn-on) — 12 17 See Fig. 8 td(on) Turn-On Delay Time — 67 — TJ = 25°C tr Rise Time — 56 — ns IC = 12A, VCC = 480V td(off) Turn-Off Delay Time — 170 250 VGE = 15V, RG = 23Ω tf Fall Time — 140 270 Energy losses include "tail" and Eon Turn-On Switching Loss — 0.70 — diode reverse recovery. Eoff Turn-Off Switching Loss — 0.80 — mJ See Fig. 9, 10, 11, 18 Ets Total Switching Loss — 1.5 2.5 td(on) Turn-On Delay Time — 61 — TJ = 150°C, See Fig. 9, 10, 11, 18 tr Rise Time — 51 — ns IC = 12A, VCC = 480V td(off) Turn-Off Delay Time — 190 — VGE = 15V, RG = 23Ω tf Fall Time — 190 — Energy losses include "tail" and Ets Total Switching Loss — 1.9 — mJ diode reverse recovery. LE Internal Emitter Inductance — 7.5 — nH Measured 5mm from package Cies Input Capacitance — 680 — VGE = 0V Coes Output Capacitance — 100 — pF VCC = 30V See Fig. 7 Cres Reverse Transfer Capacitance — 11 — ƒ = 1.0MHz trr Diode Reverse Recovery Time — 42 60 ns TJ = 25°C See Fig. — 80 120 TJ = 125°C 14 IF = 12A Irr Diode Peak Reverse Recovery Current — 3.5 6.0 A TJ = 25°C See Fig. — 5.6 10 TJ = 125°C 15 V R = 200V Qrr Diode Reverse Recovery Charge — 80 180 nC TJ = 25°C See Fig. — 220 600 TJ = 125°C 16 di/dt = 200A/µs di(rec)M/dt Diode Peak Rate of Fall of Recovery — 180 — A/µs TJ = 25°C See Fig. During tb — 120 — TJ = 125°C 17 Parameter Min. Typ. Max. Units Conditions V(BR)CES Collector-to-Emitter Breakdown Voltage 600 — — V VGE = 0V, IC = 250µA ∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage — 0.63 — V/°C VGE = 0V, IC = 1.0mA VCE(on) Collector-to-Emitter Saturation Voltage — 2.2 3.0 IC = 12A VGE = 15V — 2.7 — V IC = 23A See Fig. 2, 5 — 2.4 — IC = 12A, TJ = 150°C VGE(th) Gate Threshold Voltage 3.0 — 5.5 VCE = VGE, IC = 250µA ∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage — -11 — mV/°C VCE = VGE, IC = 250µA gfe Forward Transconductance 3.1 8.6 — S VCE = 100V, IC = 12A ICES Zero Gate Voltage Collector Current — — 250 µA VGE = 0V, VCE = 600V — — 2500 VGE = 0V, VCE = 600V, T J = 150°C VFM Diode Forward Voltage Drop — 1.4 1.7 V IC = 12A See Fig. 13 — 1.3 1.6 IC = 12A, TJ = 150°C IGES Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±20V IRGBC30UD2 Pulse width ≤ 80µs; duty factor ≤ 0.1%. VCC=80%(VCES), VGE=20V, L=10µH, RG=23Ω, ( See fig. 19 ) Pulse width 5.0µs, single shot. Switching Characteristics @ TJ = 25°C (unless otherwise specified) Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Repetitive rating; V GE=20V, pulse width limited by max. junction temperature. ( See fig. 20 ) Notes: Next Data Sheet Index Previous Datasheet To Order |
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