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IRGBC40S Datasheet(PDF) 1 Page - International Rectifier |
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IRGBC40S Datasheet(HTML) 1 Page - International Rectifier |
1 / 6 page C-15 IRGBC40S Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Parameter Min. Typ. Max. Units RθJC Junction-to-Case — — 0.77 RθCS Case-to-Sink, flat, greased surface — 0.50 — °C/W RθJA Junction-to-Ambient, typical socket mount — — 80 Wt Weight — 2.0 (0.07) — g (oz) Features • Switching-loss rating includes all "tail" losses • Optimized for line frequency operation (to 400 Hz) See Fig. 1 for Current vs. Frequency curve VCES = 600V VCE(sat) ≤ 1.8V @VGE = 15V, IC = 31A E C G n-channel Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, high- current applications. Absolute Maximum Ratings Parameter Max. Units VCES Collector-to-Emitter Voltage 600 V IC @ TC = 25°C Continuous Collector Current 50 IC @ TC = 100°C Continuous Collector Current 31 A ICM Pulsed Collector Current 240 ILM Clamped Inductive Load Current 100 VGE Gate-to-Emitter Voltage ±20 V EARV Reverse Voltage Avalanche Energy 15 mJ PD @ TC = 25°C Maximum Power Dissipation 160 W PD @ TC = 100°C Maximum Power Dissipation 65 TJ Operating Junction and -55 to +150 TSTG Storage Temperature Range °C Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) Mounting torque, 6-32 or M3 screw. 10 lbf•in (1.1N•m) Thermal Resistance PD - 9.690A TO-220AB Revision 0 Next Data Sheet Index Previous Datasheet To Order |
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