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T2G4003532-FS Datasheet(PDF) 1 Page - TriQuint Semiconductor

Part # T2G4003532-FS
Description  30W, 32V DC 3.5 GHz, GaN RF Power Transistor
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Manufacturer  TRIQUINT [TriQuint Semiconductor]
Direct Link  http://www.triquint.com
Logo TRIQUINT - TriQuint Semiconductor

T2G4003532-FS Datasheet(HTML) 1 Page - TriQuint Semiconductor

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T2G4003532-FS
30W, 32V DC – 3.5 GHz, GaN RF Power Transistor
Datasheet: Rev - 12-30-13
- 1 of 13 -
Disclaimer: Subject to change without notice
© 2013 TriQuint
www.triquint.com
Applications
• Military radar
• Civilian radar
• Professional and military radio communications
• Test instrumentation
• Wideband or narrowband amplifiers
• Jammers
Ordering Information
Part
ECCN
Description
T2G4003532-FS
EAR99
Packaged part
Flangeless
T2G4003532-
FS/FL-EVB1
EAR99
2.7-3.5 GHz
Evaluation Board
Product Features
• Frequency: DC to 3.5 GHz
• Output Power (P3dB): 28 W at 3.5 GHz
• Linear Gain: >16 dB at 3.5 GHz
• Operating Voltage: 32 V
• Low thermal resistance package
Functional Block Diagram
Pin Configuration
Pin No.
Label
1
VD / RF OUT
2
VG / RF IN
Flange
Source
General Description
The TriQuint T2G4003532-FS is a 30 W (P3dB) discrete
GaN on SiC HEMT which operates from DC to 3.5 GHz.
The device is constructed with TriQuint’s proven
TQGaN25 process, which features advanced field plate
techniques to optimize power and efficiency at high drain
bias
operating
conditions.
This
optimization
can
potentially lower system costs in terms of fewer amplifier
line-ups and lower thermal management costs.
Lead-free and ROHS compliant
Evaluation boards are available upon request.


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