T2G6001528-Q3_15 datasheet(3/13 Pages) TRIQUINT

Part #	T2G6001528-Q3

Description	18W, 28V, DC 6 GHz, GaN RF Power Transistor

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Manufacturer	TRIQUINT [TriQuint Semiconductor]

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3 / 13 page

T2G6001528-Q3

18W, 28V, DC – 6 GHz, GaN RF Power Transistor

Datasheet: Rev B 12-30-13

- 3 of 13 -

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RF Characterization – Performance at 5.2 GHz

(1, 2)

Test conditions unless otherwise noted: TA = 25 °C, VD = 28 V, IDQ = 50 mA

Symbol Parameter

Min

Typical

Max

Units

GLIN

Linear Gain

10.5

dB

P3dB

Output Power at 3 dB Gain Compression

17.3

W

DE3dB

Drain Efficiency at 3 dB Gain Compression

48.0

%

G3dB

Gain at 3 dB Compression

7.5

dB

Notes:

1. Performance at 5.2 GHz in the 5.0 to 6.0 GHz Evaluation Board

2. VDS = 28 V, IDQ = 50 mA; Pulse: 100µs, 20%

RF Characterization – Narrow Band Performance at 3.50 GHz

(1)

Test conditions unless otherwise noted: TA = 25 °C, VD = 28 V, IDQ = 50 mA

Symbol Parameter

Typical

VSWR

Impedance Mismatch Ruggedness

10:1

Notes:

1. VDS = 28 V, IDQ = 50 mA, CW at P1dB

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T2G6001528-Q3 Datasheet(PDF) 3 Page - TriQuint Semiconductor

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