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T2G6003028-FL Datasheet(PDF) 9 Page - TriQuint Semiconductor |
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T2G6003028-FL Datasheet(HTML) 9 Page - TriQuint Semiconductor |
9 / 13 page T2G6003028-FL 30W, 28V DC – 6 GHz, GaN RF Power Transistor Datasheet: Rev A 12-03-13 - 9 of 13 - Disclaimer: Subject to change without notice © 2013 TriQuint www.triquint.com Evaluation Board Layout Top RF layer is 0.020” thick Rogers RO4350B, ɛr = 3.48. The pad pattern shown has been developed and tested for optimized assembly at TriQuint Semiconductor. The PCB land pattern has been developed to accommodate lead and package tolerances. Bill of Materials Reference Design Value Qty Manufacturer Part Number C1 0.3 pF 1 ATC ATC600S0R3 C2 0.2 pF 1 ATC ATC600S0R2 L1, L2 8.8 NH 2 COILCRAFT 1606-8 C3, C4, C6, C7, C8 3 pF 5 ATC ATC600S3R0 C5 0.4 pF 1 ATC ATC600S0R5 R1 97.6 Ohms 1 Venkel CR0604-16w-97R6FT R2 4.7 Ohms 1 Newark 37C0064 R3 330 Ohms 1 Newark TNPW1206330RBT9ET1-E3 R4 50 Ohms 1 ATC CRCW120651R0FKEA C9, C10 220 pF 2 AVX AVX06035C22KAT2A C11, C12 2200 pF 2 Vitramon VJ1206Y222KXA C13, C14 22000 pF 2 Vitramon VJ1206Y223KXA C15 220 uF 1 United Chemi-Con EMVY500ADA221MJA0G C16 1.0 uF 1 Allied 541-1231 L3 48 Ohm 1 Ferrite, Laird Tech. 28F0121-0SR-10 |
Similar Part No. - T2G6003028-FL_15 |
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Similar Description - T2G6003028-FL_15 |
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