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TGA2214 Datasheet(PDF) 1 Page - TriQuint Semiconductor

Part # TGA2214
Description  2 to 18 GHz 5W GaN Power Amplifier
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Manufacturer  TRIQUINT [TriQuint Semiconductor]
Direct Link  http://www.triquint.com
Logo TRIQUINT - TriQuint Semiconductor

TGA2214 Datasheet(HTML) 1 Page - TriQuint Semiconductor

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TGA2214
2 to 18 GHz 5W GaN Power Amplifier
Preliminary Datasheet: 01-26-15
- 1 of 13 -
Disclaimer: Subject to change without notice
© 2014 TriQuint
www.triquint.com
Applications
 Test Equipment
 Electronic Warfare
 Military Radar
General Description
TriQuint’s TGA2214 is a wideband power amplifier
fabricated on TriQuint’s TQGaN15 GaN on SiC process.
The TGA2214 operates from 2
– 18 GHz and achieves
5 W of saturated output power with 14 dB of large signal
gain and greater than 20% power-added efficiency .
This combination of wideband power, gain and efficiency
provides system designers the flexibility to improve
system performance while reducing size and cost.
The TGA2214 is matched to 50
Ω with integrated DC
blocking capacitors on both RF ports simplifying system
integration; it is ideally suited for electronic warfare, test
instrumentation and radar applications across both
military and commercial markets.
Lead free and RoHS compliant.
Evaluation Boards are available upon request.
Functional Block Diagram
Pad Configuration
Pad No.
Symbol
1
RFIN
2
VG1
3
VG2
4
RFOUT
5
VD2
6
VD1
Product Features
 Frequency Range: 2 - 18 GHz
 Pout: > 37 dBm at PIN = 23 dBm
 PAE: > 20 % at Pin = 23 dBm
 Large Signal Gain (Pin = 23 dBm): > 14 dB
 Small Signal Gain: > 22 dB
 Return Loss: > 7 dB
 Bias: VD = 22 V, IDQ = 450 mA, VG = -2.3 V Typical
 Chip Dimensions: 3 x 5 x 0.10 mm
 Performance under CW operation
Ordering Information
Part
ECCN
Description
TGA2214
3A001.b.2.c
2 - 18 GHz 5W GaN
Power Amplifier
5
3
6
4
2
1


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