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TGA2237 Datasheet(PDF) 1 Page - TriQuint Semiconductor

Part # TGA2237
Description  0.03 2.5GHz 10W GaN Power Amplifier
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Manufacturer  TRIQUINT [TriQuint Semiconductor]
Direct Link  http://www.triquint.com
Logo TRIQUINT - TriQuint Semiconductor

TGA2237 Datasheet(HTML) 1 Page - TriQuint Semiconductor

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TGA2237
0.03
– 2.5GHz 10W GaN Power Amplifier
Preliminary Datasheet: Rev - 02-21-14
- 1 of 16 -
Disclaimer: Subject to change without notice
© 2014 TriQuint
www.triquint.com
Pad Configuration
Pad No.
Symbol
1
RF In
2
VG
3
RF Out, VD
Applications
 Commercial and military radar
 Communications
 Electronic Warfare
General Description
TriQuint’s TGA2237 is a wideband distributed amplifier
fabricated on TriQuint
’s production 0.25um GaN on SiC
process.
The TGA2237 operates from 0.03
– 2.5GHz
and provides 10W of saturated output power with 13dB of
large signal gain and greater than 52% power-added
efficiency.
The broadband performance supports both radar and
communication
applications
across
defense
and
commercial markets as well as electronic warfare. The
TGA2237 is
fully matched to 50Ω at both RF ports
allowing for simple system integration.
DC blocks are
required on both RF ports and the drain voltage must be
injected through an off chip bias-tee on the RF output
port.
Lead-free and RoHS compliant.
Evaluation boards are available upon request.
Ordering Information
Part
ECCN
Description
TGA2237
EAR99
0.03
– 2.5GHz 10W
GaN Power Amplifier
Product Features
 Frequency Range: 0.03 – 2.5GHz
 P
SAT: 40dBm at PIN = 27dBm
 P1dB: >32dBm
 PAE: >52%
 Large Signal Gain: 13dB
 Small Signal Gain: 19dB
 IM3 @ 120mA POUT< 33dBm/tone: -30dBc
 IM5 @ 120mA POUT< 33dBm/tone: -30dBc
 Bias: V
D = 30V, IDQ = 360mA, VG = -2.5V Typical
 Wideband Flat Power
 Chip Dimensions: 2.4 x 1.8 x 0.10 mm
Functional Block Diagram
1
3
2
J1
RF In
J2
RF Out


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