Advance Product Information

3

TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com

April 2012 © Rev A

TABLE III

THERMAL INFORMATION

Parameter

Test Conditions

(

(

°C/W)

(HRS)

(channel to backside of

carrier)

Vd = 5 V

Id = 75 mA

Pdiss = 0.375 W

97

32

8.1 E+6

Note: Worst case condition with no RF applied, 100% of DC power is

dissipated. Package temperature @ 85

°C

TABLE II

RF CHARACTERIZATION TABLE

Vd = 5V, Id = 75 mA Vg2 = 2V Vg1 = ~ -60 mV

SYMBOL

PARAMETER

TEST

CONDITION

NOMINAL

UNITS

Gain

Small Signal Gain

f = 2-20 GHz

17

dB

IRL

Input Return Loss

f = 2-20 GHz

12

dB

ORL

Output Return Loss

f = 2-20 GHz

10

dB

NF

Noise Figure

f = 2-20 GHz

3

dB

Output Power @

1dB Gain

Compression

f = 2-20 GHz

16

dBm

TGA2513-SM