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TGA2513-SM Datasheet(PDF) 3 Page - TriQuint Semiconductor |
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TGA2513-SM Datasheet(HTML) 3 Page - TriQuint Semiconductor |
3 / 12 page Advance Product Information 3 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com April 2012 © Rev A TABLE III THERMAL INFORMATION Parameter Test Conditions TCH ( oC) θJC ( °C/W) TM (HRS) θJC Thermal Resistance (channel to backside of carrier) Vd = 5 V Id = 75 mA Pdiss = 0.375 W 97 32 8.1 E+6 Note: Worst case condition with no RF applied, 100% of DC power is dissipated. Package temperature @ 85 °C TABLE II RF CHARACTERIZATION TABLE (TA = 25 °C, Nominal) Vd = 5V, Id = 75 mA Vg2 = 2V Vg1 = ~ -60 mV SYMBOL PARAMETER TEST CONDITION NOMINAL UNITS Gain Small Signal Gain f = 2-20 GHz 17 dB IRL Input Return Loss f = 2-20 GHz 12 dB ORL Output Return Loss f = 2-20 GHz 10 dB NF Noise Figure f = 2-20 GHz 3 dB P1dB Output Power @ 1dB Gain Compression f = 2-20 GHz 16 dBm TGA2513-SM |
Similar Part No. - TGA2513-SM |
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