TGA2565-SM

11-17 GHz Medium Power Amplifier

Preliminary Data Sheet: Rev A 10/31/13

- 2 of 13 -

Disclaimer: Subject to change without notice

© 2013 TriQuint

Specifications

Absolute Maximum Ratings

Parameter

Rating

Drain Voltage,Vd

+6.5 V

Drain Current, Id

450 mA

Gate Voltage, Vg

-3 to 0 V

Gate Current, Ig

-30 to 30 mA

Gain_Control Voltage, Gain_Ctrl

-3.6 to 3.6 V

Attenuator Circuit Voltage, Vpos

-3.6 to 2.3 V

Detector Circuit Power Supply,

Vsupply

1 V

≤ Vsupply

≤ 4.9 V +

2mA * Rext

Power Dissipation, Pdiss

2.93 W

RF Input Power, CW, 50Ω,T =

25ºC

18 dBm

Channel Temperature, Tch

200

Mounting Temperature (30

Seconds)

260

Storage Temperature

-40 to 150

Operation of this device outside the parameter ranges

given above may cause permanent damage. These are

stress ratings only, and functional operation of the device

at these conditions is not implied.

Rext is the value of the external resistor used on the

detector circuit shown as R1, R2 in the application circuit

diagram shown on page 7.

Recommended Operating Conditions

Parameter

Min

Typical

Max

Units

Vd

6

V

Idq (quiescent

current)

210

mA

Id_drive (current

under RF drive)

350

mA

Vg

-0.7

V

Gain_Ctrl

0

V

Vpos

2

V

Vsupply

6

V

Electrical specifications are measured at specified test

conditions.

Specifications are not guaranteed over all recommended

operating conditions.

Electrical Specifications

Test conditions unless otherwise noted: 25ºC, Vd = 6 V, Idq = 210 mA, Gain_Ctrl = 0 V, Vpos = 2 V. Vg = -0.7 V typical.

Parameter

Min

Typical

Max

Units

Operational Frequency Range

11

16.5

GHz

Gain

27

dB

Attenuation Range

14

dB

Input Return Loss

10

dB

Output Return Loss

10

dB

Output Power @ 1dB Gain Compression

(max gain)

27

dBm

Output TOI

34

dBm

Gain Temperature Coefficient (@ max gain)

-0.028

dB/°C

Power Temperature Coefficient (@ max gain)

0.03

dB/°C