TGA2576-FL

2.5 to 6 GHz GaN HEMT Power Amplifier

Preliminary Data Sheet: Rev A 08/25/11

- 7 of 11 -

Disclaimer: Subject to change without notice

Pin Description

© 2011 TriQuint Semiconductor, Inc.

Pin

Symbol

Description

3

RF In

Input, matched to 50 ohms.

1

2

3

4

56

7

8

9

10

1

Vg

Gate voltage. See Note 1.

10

Vd Top

Top Drain voltage. See Note 2.

8

RF Out

Output, matched to 50 ohms.

6

Vd Bot

Bottom Drain voltage. See Note 2.

5

Vg

Gate voltage. See Note 1.

2,4,7,9

N/C

No internal connection; may be gro

pen on PCB

unded or left o

(Package

RF

Base)

and DC ground

Notes:

1. Bias network is required; can be biased from either side (pin 1 or pin 5); see Application Circuit on page 6 as an

example.

2. Bias network is required; must be biased from both sides (pins 6 and 10); see Application Circuit on page 6 as an

example.