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2SK3228 Datasheet(PDF) 4 Page - Renesas Technology Corp |
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2SK3228 Datasheet(HTML) 4 Page - Renesas Technology Corp |
4 / 10 page 2SK3228 Rev.4.00 May 15, 2006 page 2 of 7 Absolute Maximum Ratings (Ta = 25 °C) Item Symbol Value Unit Drain to source voltage VDSS 80 V Gate to source voltage VGSS ±20 V Drain current ID 75 A Drain peak current ID (pulse) Note 1 300 A Body-drain diode reverse drain current IDR 75 A Avalanche current IAP Note 3 50 A Avalanche energy EAR Note 3 181 mJ Channel dissipation Pch Note 2 100 W Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25 °C 3. Value at Tch ≤ 25°C, Rg ≥ 50 Ω Electrical Characteristics (Ta = 25 °C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown voltage V (BR) DSS 80 — — V ID = 10 mA, VGS = 0 Gate to source leak current IGSS — — ±0.1 µA VGS = ±20 V, VDS = 0 Zero gate voltage drain current IDSS — — 10 µA VDS = 80 V, VGS = 0 Gate to source cutoff voltage VGS (off) 1.0 — 2.5 V ID = 1 mA, VDS = 10 V RDS (on) — 6.0 7.5 m Ω ID = 40 A, VGS = 10 V Note 4 Static drain to source on state resistance RDS (on) — 8.0 12 m Ω ID = 40 A, VGS = 4 V Note 4 Forward transfer admittance |yfs| 55 90 — S ID = 40 A, VDS = 10 V Note 4 Input capacitance Ciss — 9700 — pF Output capacitance Coss — 1250 — pF Reverse transfer capacitance Crss — 290 — pF ID = 10 V VGS = 0 f = 1 MHz Total gate charge Qg — 150 — nC Gate to source charge Qgs — 30 — nC Gate to drain charge Qgd — 30 — nC VDD = 25 V VGS = 25 V ID = 75 A Turn-on delay time td (on) — 80 — ns Rise time tr — 300 — ns Turn-off delay time td (off) — 770 — ns Fall time tf — 370 — ns ID = 10 A VGS = 40 V RL = 0.75 Ω Body-drain diode forward voltage VDF — 1.05 — V IF = 75 A, VGS = 0 Body-drain diode reverse recovery time trr — 90 — ns IF = 75 A, VGS = 0 diF/dt = 50 A/ µs Note: 4. Pulse test |
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Similar Description - 2SK3228_15 |
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