TGA2579-2-FL

20W Ku-Band GaN Power Amplifier

Preliminary Datasheet: Rev - 08-16-13

- 2 of 12 -

Disclaimer: Subject to change without notice

© 2013 TriQuint

www.triquint.com

Absolute Maximum Ratings

Parameter

Value

40 V

Drain to Gate Voltage

100 V

-5 to 0 V

4.3 A

-16 to 84 mA

131 W

RF Input Power, CW, 50 Ω,

29 dBm

275 °C

Mounting Temperature

(30 Seconds)

260 °C

Storage Temperature

-40 to 150 °C

Operation of this device outside the parameter ranges

given above may cause permanent damage. These are

stress ratings only, and functional operation of the device at

these conditions is not implied.

Recommended Operating Conditions

Parameter

Value

25 V

1000 mA

2900 mA

-2.4 V (Typ.)

Electrical

specifications

are

measured

at

specified

test

conditions.

Specifications

are

not

guaranteed

over

all

recommended operating conditions.

Electrical Specifications

Parameter

Min

Typical

Max

Units

Operational Frequency Range

14.0

15.35

GHz

Small Signal Gain @ Mid Band

35

dB

Input Return Loss

8

dB

Output Return Loss

7

dB

Gain @ Pin = 0dBm

34

dB

Output Power at Saturation (Pin = 24dBm)

43

dBm

Power-Added Efficiency (Pin = 24dBm)

27

%

Output TOI

44

dBm

Gain Temperature Coefficient

-0.05

dB/°C

Power Temperature Coefficient

-0.004

dBm/°C