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TGA2583 Datasheet(PDF) 3 Page - TriQuint Semiconductor |
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TGA2583 Datasheet(HTML) 3 Page - TriQuint Semiconductor |
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3 / 15 page  TGA2583 2.7 – 3.7GHz 10W GaN Power Amplifier Preliminary Datasheet: Rev B 02-20-15 - 3 of 15 - Disclaimer: Subject to change without notice © 2014 TriQuint www.triquint.com Thermal and Reliability Information Parameter Test Conditions Value Units Thermal Resistance ( θJC) (1) Tbase = 85°C, VD = 25V, IDQ = 175mA Pulsed VD: PP = 1ms, DC = 10% 3.51 ºC/W Channel Temperature (TCH) (Under RF drive) Tbase = 85°C, VD = 25V, ID_Drive = 915mA, PIN = 16dBm, POUT = 40.5dBm, PDISS = 11.7W 126 °C Median Lifetime (TM) 2.9 x 10^11 Hrs Thermal Resistance ( θJC) (1) Tbase = 85°C, VD = 32V, IDQ = 175mA Pulsed VD: PP = 1ms, DC = 10% 4.68 ºC/W Channel Temperature (TCH) (Under RF drive) Tbase = 85°C, VD = 32V, ID_Drive = 1035mA, PIN = 16dBm, POUT = 41.8dBm, PDISS = 17.9W 169 °C Median Lifetime (TM) 2.36 10^9 Hrs Thermal Resistance ( θJC) (1) Tbase = 85°C, VD = 25V, IDQ = 175mA, CW 5.15 ºC/W Channel Temperature (TCH) (Under RF drive) Tbase = 85°C, VD = 25V, ID_Drive = 850mA, PIN = 16dBm, POUT = 40.3dBm, PDISS = 10.6W 140 °C Median Lifetime (TM) 5.43 x 10^9 Hrs Thermal Resistance ( θJC) (1) Tbase = 85°C, VD = 32V, IDQ = 175mA, CW 7.1 ºC/W Channel Temperature (TCH) (Under RF drive) Tbase = 85°C, VD = 32V, ID_Drive = 970mA, PIN = 16dBm, POUT = 41.6dBm, PDISS = 16.5W 202 °C Median Lifetime (TM) 1.06 x 10^7 Hrs Notes: 1. Thermal resistance measured to back of carrier plate. MMIC mounted on 40 mils CuMo (80/20) carrier using 1.5 mil AuSn. Median Lifetime Test Conditions: VD = 40 V; Failure Criteria = 10% reduction in ID_MAX 1E+04 1E+05 1E+06 1E+07 1E+08 1E+09 1E+10 1E+11 1E+12 1E+13 1E+14 1E+15 1E+16 1E+17 1E+18 25 50 75 100 125 150 175 200 225 250 275 Channel Temperature, TCH (C) Median Lifetime vs. Channel Temperature FET13 |
Similar Part No. - TGA2583_15 |
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Similar Description - TGA2583_15 |
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